EMIF02-SPK02F2 2-line IPAD, EMI filter and ESD protection Datasheet production data Features Packaged in lead-free Flip Chip Very low resistance: 0.35 High attenuation: -45 dB at 900 MHz Very low PCB space consumption: 0.89 mm x 1.26 mm Flip-Chip package Very thin package: 0.65 mm (5 bumps) High efficiency in ESD suppression IEC6 1000-4-2 level 4 High reliability offered by monolithic integration Figure 1. Pin configuration (bump side) High reduction of parasitic elements through 1 3 2 integration and wafer level packaging O1 I1 A Complies with the following standards IEC 61000-4-2 level 4: GND B 15 kV (air discharge) 8 kV (contact discharge) I2 O2 C Application Figure 2. Functional schematic Mobile phones InputInput OutputOutput Description The EMIF02-SPK02F2 chip is a highly integrated device designed to suppress EMI/RFI noise for interface line filtering. The EMIF02-SPK02F2 flip-chip packaging means the package size is equal to the die size. That s why the EMIF02-SPK02F2 is a very small device. Additionally, this filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up 30 kV. TM: IPAD is a trademark of STMicroelectronics April 2012 Doc ID 15035 Rev 3 1/12 This is information on a product in full production. www.st.com 12Characteristics EMIF02-SPK02F2 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD discharge IEC 61000-4-2 V Air discharge 30 kV PP Contact discharge 30 I Maximum rms current per channel 350 mA SPK T Junction temperature range -30 to 125 C j T Storage temperature range -55 to + 150 C stg Figure 3. Electrical characteristics - definitions Symbol Parameter I PP Slope: 1/R V = Breakdown voltage d BR V = Clamping voltage CL I = Leakage current V RM RM V = Stand-off voltage RM V CL I = Forward current F VCL I = Peak pulse current PP I = Breakdown current R V = Forward voltage drop F R = Dynamic resistance Slope: 1/R d d I PP T = Voltage temperature Table 2. Electrical characteristics - values (T = 25 C) amb Symbol Test conditions Min Typ Max Unit V I = 1 mA 6 V BR R I V = 3 V 400 nA RM RM R 0.35 0.8 I/O C V = 0 V DC, 1 MHz 185 250 315 pF LINE R F Cut-off frequency: Z = Z = 50 20 MHz c SOURCE LOAD 2/12 Doc ID 15035 Rev 3