74V1G04STR

74V1G04 SINGLE INVERTER HIGH SPEED: t = 3.8ns (TYP.) at V =5V PD CC LOW POWER DISSIPATION: I =1 A(MAX.) at T =25C CC A HIGH NOISE IMMUNITY: V =V = 28% V (MIN.) NIH NIL CC POWER DOWN PROTECTION ON INPUT SOT23-5L SOT323-5L SYMMETRICAL OUTPUT IMPEDANCE: I = I =8mA (MIN)atV =4.5V OH OL CC BALANCED PROPAGATION DELAYS: t t ORDER CODES PLH PHL OPERATING VOLTAGE RANGE: PACKAGE T & R V (OPR) = 2V to 5.5V CC SOT23-5L 74V1G04STR IMPROVED LATCH-UP IMMUNITY SOT323-5L 74V1G04CTR DESCRIPTION The 74V1G04 is an advanced high-speed CMOS Power down protection is provided on input and 0 SINGLE INVERTER fabricated with sub-micron to 7V can be accepted on input with no regard to 2 silicon gate and double-layer metal wiring C MOS the supply voltage. This device can be used to technology. interface5Vto3V. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. PIN CONNECTION AND IEC LOGIC SYMBOLS April 2004 1/974V1G04 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN N SYMBOL NAME AND FUNCTION 1 NC Not Connected 2 1A Data Input 4 1Y Data Output 3 GND Ground (0V) V 5 Positive Supply Voltage CC TRUTH TABLE AY LH HL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Supply Voltage -0.5 to +7.0 V CC V DC Input Voltage -0.5 to +7.0 V I V DC Output Voltage -0.5 to V +0.5 V O CC I DC Input Diode Current -20 mA IK I DC Output Diode Current 20 mA OK I DC Output Current 25 mA O I or I DC V or Ground Current 50 mA CC GND CC T Storage Temperature -65 to +150 C stg T Lead Temperature (10 sec) 260 C L Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit V Supply Voltage 2to 5.5 V CC V Input Voltage 0to 5.5 V I V Output Voltage 0 to V V O CC T Operating Temperature -55 to 125 C op Input Rise and Fall Time (note 1) (V =3.3 0.3V) 0 to 100 ns/V CC dt/dv (V =5.0 0.5V) 0to 20 ns/V CC 1) V from 30% to 70% of V IN CC 2/9