2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic 4 Fast switching speed Surface mounting device in medium power 3 SOT-223 package 2 1 Applications SOT-223 Emergency lighting LED CCFL drivers (back lighting) Voltage regulation Figure 1. Internal schematic diagram Relay driver Description The device is a PNP transistor manufactured using new PB-HCD (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging 2STN2540 N2540 SOT-223 Tape and reel January 2008 Rev 3 1/9 www.st.com 9Electrical ratings 2STN2540 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-base voltage (I = 0) -40 V CBO E V Collector-emitter voltage (I = 0) -40 V CEO B V Emitter-base voltage (I = 0) -6 V EBO C I Collector current -5 A C I Collector peak current (t < 5ms) -10 A CM P I Base peak current (t < 5ms) -2 A BM P P Total dissipation at T = 25 C 1.6 W tot amb T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-amb max 78 C/W thj-amb 2 1. Device mounted on PCB area of 1cm 2/9