2STF2280 Low voltage high performance PNP power transistor Preliminary data Features Low collector-emitter saturation voltage High current gain characteristic 4 Fast switching speed 3 2 1 Applications DC-DC converter, voltage regulation SOT-89 General purpose switching equipment Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging 2STF2280 2280 SOT-89 Tape and reel January 2010 Doc ID 16984 Rev 1 1/7 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 7 change without notice.Electrical ratings 2STF2280 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) -80 V CBO E V Collector-emitter voltage (I = 0) -80 V CEO B V Emitter-base voltage (I = 0) -5 V EBO C I Collector current 2 A C I Collector peak current (t < 5 ms) 4 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1 A BM P P Total dissipation at T = 25C 1.4 W TOT amb T Operating junction temperature J -65 to 150 C T Storage temperature STG Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient max 89 C/W thJA 1. Device mounted on a PCB area of 1 cm. 2/7 Doc ID 16984 Rev 1