Product Information

S34ML16G202TFI200

S34ML16G202TFI200 electronic component of SkyHigh Memory

Datasheet
Flash Memory 16G NAND Flash Memory

Manufacturer: SkyHigh Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 44.2503 ( AUD 48.68 Inc GST) ea
Line Total: AUD 44.2503 ( AUD 48.68 Inc GST)

1575 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1575 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

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S34ML16G202TFI200
SkyHigh Memory

1 : AUD 44.2503
10 : AUD 41.2222
25 : AUD 40.7763
50 : AUD 39.7732
96 : AUD 34.906
288 : AUD 33.7357
576 : AUD 32.8254
1056 : AUD 31.2278
2592 : AUD 30.5405

     
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S34ML16G2 16 Gb, 4-Bit ECC, x8 I/O, 3 V V CC NAND Flash for Embedded General Description Cypress S34ML16G2 16-Gb NAND is offered in 3.3 V with x8 I/O interface. This document contains information for the CC S34ML16G2 device, which is a quad-die stack of four S34ML04G2 die. For detailed specifications, please refer to the discrete die data sheet: S34ML01G2 04G2. Distinctive Characteristics Density Security 16 Gb (4 Gb 4) One Time Programmable (OTP) area Serial number (unique ID) Architecture (For each 4 Gb device) Hardware program/erase disabled during power transition Input / Output Bus Width: 8-bits Page Size: (2048 + 128) bytes 128-byte spare area Additional Features Block Size: 64 Pages or (128k + 8k) bytes Supports Multiplane Program and Erase commands Plane Size Supports Copy Back Program 2048 Blocks per Plane or (256M + 16M) bytes Supports Multiplane Copy Back Program Device Size Supports Read Cache 2 Planes per Device or 512 Mbyte Electronic Signature NAND Flash Interface Manufacturer ID: 01h Open NAND Flash Interface (ONFI) 1.0 compliant Operating Temperature Address, Data and Commands multiplexed Industrial: 40 C to 85 C Supply Voltage 3.3 V device: Vcc = 2.7 V ~ 3.6 V Performance Page Read / Program Reliability Random access: 30 s (Max) 100,000 Program / Erase cycles (Typ) (with 4-bit ECC per 528 bytes) Sequential access: 25 ns (Min) 10 Year Data retention (Typ) Program time / Multiplane Program time: 300 s (Typ) Blocks zero and one are valid and will be valid for at least Block Erase / Multiplane Erase 1000 Block Erase time: 3.5 ms (Typ) program-erase cycles with ECC Package Options Lead Free and Low Halogen 48-Pin TSOP 12 20 1.2 mm 63-Ball BGA 9 11 1.2 mm Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-98528 Rev. *D Revised April 25, 2016S34ML16G2 Contents General Description ............................................................. 1 7. Electrical Characteristics........................................... 12 7.1 Valid Blocks .................................................................. 12 Distinctive Characteristics .................................................. 1 7.2 DC Characteristics........................................................ 12 Performance.......................................................................... 1 7.3 Pin Capacitance............................................................ 12 7.4 Power Consumptions and Pin Capacitance 1. Connection Diagram.................................................... 3 for Allowed Stacking Configurations ............................. 13 2. Pin Description............................................................. 4 8. Physical Interface ....................................................... 14 3. Block Diagrams............................................................ 5 8.1 Physical Diagram.......................................................... 14 4. Addressing ................................................................... 7 9. Ordering Information.................................................. 16 5. Read Status Enhanced ................................................ 7 10. Document History....................................................... 17 6. Read ID.......................................................................... 8 6.1 Read Parameter Page ................................................... 9 Document Number: 001-98528 Rev. *D Page 2 of 18

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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