S34ML08G2
8 Gb, 4-bit ECC, x8 I/O and 3 V VCC
NAND Flash Memory for Embedded
Distinctive Characteristics
Density Security
8 Gb (4 Gb x 2) One Time Programmable (OTP) area
Serial number (unique ID)
Architecture (For each 4 Gb device)
Hardware program/erase disabled during power transition
Input / Output Bus Width: 8-bits
Page Size: (2048 + 128) bytes; 128-byte spare area Additional Features
Block Size: 64 Pages or (128k + 8k) bytes Supports Multiplane Program and Erase commands
Plane Size Supports Copy Back Program
2048 Blocks per Plane or (256M + 16M) bytes Supports Multiplane Copy Back Program
Device Size Supports Read Cache
2 Planes per Device or 512 Mbyte
Electronic Signature
NAND Flash Interface
Manufacturer ID: 01h
Open NAND Flash Interface (ONFI) 1.0 compliant
Operating Temperature
Address, Data and Commands multiplexed
Industrial: -40C to 85C
Supply Voltage
industrial Plus: -40C to 105C
3.3V device: Vcc = 2.7V ~ 3.6V
Performance
Page Read / Program Reliability
Random access: 30 s (Max) 100,000 Program / Erase cycles (Typ)
(with 4-bit ECC per 528 bytes)
Sequential access: 25 ns (Min)
10 Year Data retention (Typ)
Program time / Multiplane Program time: 300 s (Typ)
Blocks zero and one are valid and will be valid for at least 1000
Block Erase / Multiplane Erase
program-erase cycles with ECC
Block Erase time: 3.5 ms (Typ)
Package Options
Lead Free and Low Halogen
48-Pin TSOP 12 x 20 x 1.2 mm
63-Ball BGA 11 x 9 x 1 mm
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document Number: 002-00484 Rev. *F Revised Monday, April 25, 2016S34ML08G2
Contents
Distinctive Characteristics .................................................. 1
Performance.......................................................................... 1
1. General Description..................................................... 3
2. Connection Diagram.................................................... 3
3. Pin Description............................................................. 4
4. Block Diagrams............................................................ 5
5. Addressing ................................................................... 6
6. Read Status Enhanced ................................................ 7
7. Read ID.......................................................................... 7
7.1 Read Parameter Page ................................................... 8
8. Electrical Characteristics.......................................... 10
8.1 Valid Blocks ................................................................. 10
8.2 Recommended Operating Conditions.......................... 10
8.3 DC Characteristics....................................................... 11
8.4 Pin Capacitance........................................................... 11
8.5 Power Consumptions and Pin Capacitance for Allowed
Stacking Configurations............................................... 11
9. Physical Interface ...................................................... 12
9.1 Physical Diagram......................................................... 12
10. Ordering Information................................................. 14
11. Document History...................................................... 15
Document Number: 002-00484 Rev. *F Page 2 of 16