Product Information

SP8J66FRATB

SP8J66FRATB electronic component of ROHM

Datasheet
Power Management Specialised - PMIC SP8J66FRA is the high reliability automotive MOSFET, suitable for Switching.

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 4.698 ( AUD 5.17 Inc GST) ea
Line Total: AUD 4.698 ( AUD 5.17 Inc GST)

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 1
Multiples : 1
1 : AUD 4.698
10 : AUD 4.446
100 : AUD 4.355
500 : AUD 4.1
1000 : AUD 4.0125

0 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 2500
Multiples : 2500
2500 : AUD 1.8931
5000 : AUD 1.8577

     
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SP8J66FRA Datasheet -30V Pch +Pch Power MOSFET llOutline V -30V DSS R (Max.) 18.5m DS(on) SOP8 I 9.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB Marking SP8J66 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 9.0 A D *1 I Pulsed drain current 36 A DP Gate - Source voltage V 20 V GSS *2 P 2.0 D Power dissipation (total) W *3 P 1.4 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs SP8J66FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T j referenced to 25 V = -10V, I = -9.0A - 13.5 18.5 GS D Static drain - source *4 R V = -4.5V, I = -4.5A - 17.5 23.6 m DS(on) GS D on - state resistance V = -4.0V, I = -4.5A - 19.0 24.7 GS D R Gate resistance f = 1MHz, open drain - 4.9 - G Forward Transfer *4 Y V = -10V, I = -9A 11 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.002 Not Recommended for New Designs

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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