Infrared light emitting diode, top view type SIR-34ST3F Datasheet The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. Applications Outline Optical control equipment Light source for remote control devices Features 1) Compact ( 3.1mm). 2) High efficiency, high output P =8.0mW (I =50mA). O F 3) Wide radiation angle =27. 4) Emission spectrum well suited to silicon detectors ( P=950nm). 5) Good current-optical output linearity. 6) Long life, high reliability. Dimensions (Unit : mm) Absolute maximum ratings (T = 25C) a Parameter Symbol Value Unit I Forward current 100 mA F V Reverse voltage 5 V R P Power dissipation 160 mW D I * 500 mA Pulse forward current FP T C Operating temperature 25 to 85 opr T 40 to 85 C Storage temperature stg *Pulse width = 0.1 ms, duty ratio 1% www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.D 1/4Datasheet SIR-34ST3F Electrical and optical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. P I =50mA Optical output - 8.0 - mW O F I I =50mA 3.5 - 17.6 Emitting strength mW/sr E F V I =100mA - 1.3 1.6 V Forward voltage F F I V =3V Reverse current -- 10 A R R I =50mA - 950 - nm Peak light emitting wavelength p F I =50mA Spectral line half width -40 - nm F I =50mA - - deg Half-viewing angle 27 1/2 F I =50mA Response time trtf - 1.0 - s F f I =50mA - 1.0 - MHz Cut-off frequency C F Classified table of rank Emitting Strength I Item Unit E 3.5 5.4 mW / sr Jto Kt3.9o 7.9 mW / sr 5.6 11.7 mW / sr Lto 8.2 17.6 mW / sr Mto Condition I =50mA F www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.06 - Rev.D 2/4