Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. Applications Dimensions (Unit : mm) Light source for sensors Notes: 1. Tolerances are 0.2 unless otherwise indicated. 2. Value in parenthese is size Features at base of leads. 1) Compact package (4.7x4.6 mm) with lens. 4.1 2) High efficiency, high output. 4.6 0.1 3) Emission spectrum well suited to silicon detectors (P = 950 nm). 0.15 4) Good current-optical output linearity. R0.5 2-C0.7 R0.75 5) Long life, high reliability. R0.5 20.65 0.40 20.45 1 2 0.64 (2.54) 1 2 Cathode Anode Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Forward current IF 50 mA Reverse voltage VR 5 V Power dissipation PD 80 mW Pulse forward current IFP 0.5 A Operating temperature Topr 25 to +85 C Storage temperature Tstg 30 to +100 C Pulse width = 0.1ms, duty ratio 1% Electrical and optical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Emitting strength IE 0.8 mW/sr IF=10mA Emitting strength IE 0.48 1.3 1.94 mA IF= 10mA Forward voltage VF 1.3 1.6 V IF= 50mA Reverse current IR 10 A VR= 5V Peak light emitting wavelength 950 P nm IF=10mA Spectral line half width 40 nm IF=20mA Half-viewing angle 1/2 30 deg IF=50mA Response time tr tf 1.0 s IF= 50mA Cut-off frequency fc 1.0 MHz IF= 50mA According to our measurement procedures. www.rohm.com 2010.06 - Rev.B 1/2 c 2010 ROHM Co., Ltd. All rights reserved. Gate remainder 0.3Max. 1.8 0.05 1.0 1.5 1.0 2.8 1.9 12Min. 4.7 0.1 2.54 0.1 SIM-22ST Data Sheet Electrical and optical characteristic curves 14 70 50 60 12 10 50 40 25C 0C 8 40 30 25C 50C 30 6 75C 20 20 4 10 10 2 0 0 0 20 0 20 40 60 80 100 0 10 20304050 0 0.4 0.8 1.2 1.6 AMBIENT TEMPERATURE : Ta(C) FORWARD CURRENT : IF(mA) FORWARD VOLTAGE : VF (V) Fig.1 Forward current falloff Fig.2 Forward current vs. forward voltage Fig.3 Emitting strength vs. forward current 100 200 80 100 60 50 40 20 20 10 0 25 0 25 50 75 100 900 920 940 960 980 1000 AMBIENT TEMPERATURE : Ta (C) OPTICAL WAVELENGTH : (nm) Fig.4 Relative emitting strength vs. Fig.5 Wavelength ambient temperature 0 10 100 20 30 80 40 50 60 60 40 70 20 80 90 0 100 80 60 40 20 0 10 20 30 40 50 60 70 80 90 RELATIVE EMITTING STRENGTH (%) ANGULAR DISPLACEMENT : (deg) Fig. 6 Directional pattern www.rohm.com 2010.06 - Rev.B 2/2 c 2010 ROHM Co., Ltd. All rights reserved. FORWARD CURRENT : IF (mA) RELATIVE EMITTING STRENGTH : IE (%) RELATIVE OPTICAL OUTPUT : PO (%) FORWARD CURRENT : IF (mA) RELATIVE EMITTING STRENGTH (%) EMITTING STRENGTH I : IE (mW / Sr)