Product Information

SIM-012SBT97

SIM-012SBT97 electronic component of ROHM

Datasheet
Infrared Emitters SMD IR EMITTER SIDE VIEW

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 1.6595 ( AUD 1.83 Inc GST) ea
Line Total: AUD 1.6595 ( AUD 1.83 Inc GST)

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 1
Multiples : 1
1 : AUD 1.6595
10 : AUD 1.2785
25 : AUD 1.062
100 : AUD 0.9127
250 : AUD 0.7965
500 : AUD 0.697
1000 : AUD 0.5476

0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul


Multiples : 1

0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul


Multiples : 1

0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 3500
Multiples : 1
3500 : AUD 0.5786

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Illumination Color
Series
Brand
Forward Current
Forward Voltage
Lens Shape
Viewing Angle
Fall Time
Maximum Forward Current
Rise Time
Factory Pack Quantity :
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

SIM-012SB Sensors High power chip sensor, side view type SIM-012SB The SIM-012SB is ultra small size and high power ohip sensor. Original technology, original structure and original Optical design enable to use Automatic moantinig machine, Reflow, ultra smallsize, High power. z Applications z Dimensions (Unit : mm) Optical control equipment Note) 1.Unspecified tolerance shall be + 0.2. 2.Dimension in parenthesis are show for Light source for remote control devices reference. 0.25 2-0.4 z Features 12 1) High power by 2 lenze. 3 2) Emitting pore can have 7time high power then substruk type with parabola structure. 0.8 R1 3) Ultra -compact surface mount package. (3mmx3mmx2mm) 4) It is possible to do Reflow. Internal connection diagram 2 1 z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Forward current IF 40 mA Reverse voltage VR 5 V Power dissipation PD 60 mW Pulse forward current IFP 0.5 A Operating temperature Topr 30~+85 C Storage temperature Tstg 40~+100 C Pulse width=0.1msec, duty ratio 1% Rev.A 1/3 2 2 3SIM-012SB Sensors z Electrical and optical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Optical output PO 3.5 mW IF=20mA Emitting strength IE 0.9 7.1 mW/sr IF=20mA Forward voltage VF 1.2 1.5 V IF=20mA Reverse current IR 10 A VR=3V P 950 nm IF=20mA Peak light emitting wavelength 40 nm IF=20mA Spectral line half width 1 / 2 12 deg IF=20mA Half-viewing angle trtf 1.0 s IF=20mA Pesponse time fC 1.0 MHz IF=20mA Cut-off frequency z Electrical and optical characteristic curves 8 50 50 25C 0C 6 40 40 25C 50C 30 30 4 75C 20 20 2 10 10 0 0 0 0 1 2 20 0 20 40 60 80 100 021003040 FORWARD VOLTAGE : VF (V) AMBIENT TEMPERATURE : Ta (C) FORWARD CURRENT : IF (mA) Fig.2 Forward current vs. Fig.1 Forward current faloff Fig.3 Emitting strength vs. forward voltage forward current 1000 100 80 60 100 40 20 0 10 900 920 940 960 980 1000 50 25 0 25 50 75 100 OPTICAL WAVELENGTH : (nm) AMBIENT TEMPERATURE : Ta (C) Fig.5 Wavelength Fig.4 Relative emitting strength vs.ambient temperature Rev.A 2/3 FORWARD CURRENT : IF (mA) RELATIVE EMITTING STRENGTH : IE (%) RELATIVE OPTICAL OUTPUT : PO (%) FORWARD CURRENT : IF (mA) EMITTING STRENGTH : IE (mW/sr)

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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