X-On Electronics has gained recognition as a prominent supplier of SCT3060ALHRC11 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT3060ALHRC11 SiC MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT3060ALHRC11 ROHM

SCT3060ALHRC11 electronic component of ROHM
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See Product Specifications
Part No.SCT3060ALHRC11
Manufacturer: ROHM
Category: SiC MOSFETs
Description: SiC MOSFETs 650V 39A 165W SIC 60mOhm TO-247N
Datasheet: SCT3060ALHRC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
1: AUD 38.3392 ( AUD 42.17 Inc GST) ea
Line Total: AUD 38.3392 ( AUD 42.17 Inc GST) 
Availability - 435
Ship by Wed. 02 Oct to Fri. 04 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
435
Ship by Wed. 02 Oct to Fri. 04 Oct
MOQ : 1
Multiples : 1
1 : AUD 38.3392
10 : AUD 34.6415
25 : AUD 31.5631
50 : AUD 30.9792
100 : AUD 30.8023
250 : AUD 28.9977
450 : AUD 28.5554
900 : AUD 27.9008

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCT3060ALHRC11 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT3060ALHRC11 and other electronic components in the SiC MOSFETs category and beyond.

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SCT3060ALHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline TO-247N V 650V DSS R (Typ.) 60m DS(on) *1 39A I D P 165W (3) D (2) (1) lInner circuit lFeatures (1) Gate 1) Qualified to AEC-Q101 (2) Drain (3) Source 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are 5) Easy to parallel not exchangeable. Their exchange might lead to malfunction. 6) Simple to drive 7) Pb-free lead plating RoHS compliant lPackaging specifications Tube Packing lApplication Automobile Reel size (mm) - Switch mode power supplies Tape width (mm) - Type Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3060AL lAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit Drain - Source Voltage V 650 V DSS *1 T = 25C I 39 A c D Continuous Drain current *1 T = 100C I 27 A c D *2 Pulsed Drain current I 97 A D,pulse V Gate - Source voltage (DC) -4 to +22 V GSS *3 Gate - Source surge voltage (t < 300nsec) -4 to +26 V V surge GSS surge *4 Recommended drive voltage V 0 / +18 V GS op T Junction temperature 175 C j T Range of storage temperature -55 to +175 C stg www.rohm.com TSQ50211-SCT3060ALHR 2018 ROHM Co., Ltd. All rights reserved. 1/12 16.Nov.2018 - Rev.002 TSZ22111 14001SCT3060ALHR Datasheet lElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V = 0V, I = 1mA GS D Drain - Source breakdown V T = 25C 650 - - V (BR)DSS j voltage T = -55C 650 - - j V = 0V, V =650V GS DS Zero Gate voltage I T = 25C - 1 10 A DSS j Drain current T = 150C - 2 - j I V = , V = 0V Gate - Source leakage current +22V - - 100 nA GSS+ GS DS Gate - Source leakage current I V = -4V , V = 0V - - -100 nA GSS- GS DS V V = 10V, I = Gate threshold voltage 6.67mA 2.7 - 5.6 V GS (th) DS D V = 18V, I = 13A GS D Static Drain - Source *5 T = 25C R - 60 78 m j DS(on) on - state resistance T = 150C - 86 - j Gate input resistance R f = 1MHz, open drain - 12 - G lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal resistance, junction - case - 0.70 0.91 C/W thJC lTypical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 9.00E-02 1.23E-03 th1 th1 R C 5.96E-01 K/W 7.32E-03 Ws/K th2 th2 R C 1.47E-02 1.64E-01 th3 th3 R R T th,n T th1 j c P C C D C th1 th2 th,n T a www.rohm.com TSQ50211-SCT3060ALHR 2018 ROHM Co., Ltd. All rights reserved. 2/12 16.Nov.2018 - Rev.002 TSZ22111 15001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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