RN779F PIN Diodes Data sheet Outline V 50 V R I 50 mA F C 0.9 pF t rF 7.0 Feature Inner Circuit High reliability Small mold type Low rF Application Packaging Specification Auto Gain controlcircuit Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Quantity(pcs) 3000 Structure SILICON DIFFUSED p-n JUNCTION SILICON Taping Code T106 Marking 5M (T = 25C) Absolute Maximum Rating a Parameter Symbol Limits Unit V Reverse voltage 50 V R Forward current I 50 mA F T Junction temperature 150 j T Storage temperature -55 150 stg (T = 25C) Characteristic a Value per element Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage V I =10mA - - 1.0 V F F I Reverse current V =50V R - - 100 nA R Capacitance between terminals C V =35V f=1.0MHz - - 0.9 pF t R High frequency forward resistance I =10mA f=100MHz rF - - 7.0 F www.rohm.com 1/4 2017 ROHM Co., Ltd. All rights reserved. 2019/06/28 Rev.003RN779F Data sheet Characteristic Curves www.rohm.com 2/4 2017 ROHM Co., Ltd. All rights reserved. 2019/06/28 Rev.003