650nm Red Single Mode Laser Diode RLD65PZX2 Datasheet Application Outline view Sensor Bar-code scanner Ranging Etc. Merit Single mode 5.6 metal stem Absolute Maximum Ratings (Tc=25C) Parameter Symbol Ratings Unit Optical output Po 7 mW LD Vr 2 V Reverse voltage PIN PD Vr(PD) 20 V Operating temp. Top -10 to 70 C Storage temp. Tstg -40 to 85 C Characteristics (Tc=25C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Threshold current Ith 25 35 mA Operating current Iop Po=5mW 33 45 mA Operating voltage Vop Po=5mW 2.3 2.7 V Output efficiency 2mW/(I(5mW)-I(3mW)) 0.4 0.6 1.0 W/A Monitor current Im Po=5mW, Vr(PD)=15V 0.08 0.20 0.50 mA // 6.0 8.5 12.0 deg. Beam divergence Po=5mW 24 28 34 deg. // -3 0 +3 deg. Beam tolerance Po=5mW -4 0 +4 deg. Emission point XYZ -100 0 +100 m accuracy Lasing wavelength Po=5mW 650 658 666 nm Astigmatic difference As NA=0.55, Po=3.5mW 5 10 m Caution: and // are defined as full width at half maximum. Operation temperature is regulated by case temperature Tc RLD65PZX2 Datasheet Electrical Characteristics 60 70 25 40 50 7 7 7 6 6 6 5 5 5 4 4 4 I-L 3 I-V 3 3 2 2 2 1 1 1 0 0 0 0 20 40 60 80 0 0.1 0.2 0.3 Im mA If mA Optical Characteristics 25 40 50 60 70 1 1 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0 -60 -40 -20 0 20 40 60 650 655 660 665 670 FFP deg. nm * This data is made from the result of having measured the sample extracted at random. Therefore, it is not what showed the ability of the whole product.