Product Information

RFN1L6SDDTE25

RFN1L6SDDTE25 electronic component of ROHM

Datasheet
Rectifiers DIODE GEN PURPOSE

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.7024 ( AUD 0.77 Inc GST) ea
Line Total: AUD 0.7024 ( AUD 0.77 Inc GST)

9993 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 1
Multiples : 1
1 : AUD 0.681
10 : AUD 0.5639
30 : AUD 0.5061
100 : AUD 0.4484
500 : AUD 0.4141
1500 : AUD 0.3971

9993 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.7024
10 : AUD 0.5644
100 : AUD 0.4193
500 : AUD 0.3468
1000 : AUD 0.2937
1500 : AUD 0.2512
9000 : AUD 0.2459
49500 : AUD 0.2406

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

Super Fast Recovery Diode RFN1L6SDD Datasheet AEC-Q101 Qualified Series Dimensions (Unit : mm) Land Size Figure (Unit : mm) 2.0 Standard Fast Recovery Application 6 6 8 4 General rectification 1 2 PMDS Features Cathode 1) Low forward voltage Structure 2) Low switching loss ROHM : PMDS JEDEC : SOD-106 1 2 : Manufacture Date Anode Construction Taping Dimensions (Unit : mm) 2.00.05 Silicon epitaxial planar type 4.00.1 0.3 1.550.05 1.55 2.90.1 4.00.1 2.8MAX Absolute Maximum Ratings (T = 25C) l Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct voltage 600 V R On glass epoxy substrate, T=115C I l Average current 0.8 A o 60Hz half sin wave , Resistive load I 60Hz half sin wave, Non-repetitive at T =25C Non-repetitive forward surge current j 15 A FSM Operating junction temperature T - 150 C j T Storage temperature - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =0.8A Forward voltage - 1.15 1.45 V F F I V =600V Reverse current -0.01 1 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 25 35 ns F R R R (j-l) Thermal resistance Junction to Lead -- 23C/W th www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.A 1/4 Not Recommended for New Designs 5.30.1 0.05 9.50.1 5.50.05 1.750.1 2.0 120.2 4.2Data Sheet RFN1L6SDD Electrical Characteristic Curves 10 10000 T = 150 C T = 125 C j j 1 1000 T = 75 C j 0.1 100 T = 150 C j T = 25 C T = 125 C j j 0.01 10 T = 75 C j T = 25 C j 0.001 1 0 500 1000 1500 2000 0 100 200 300 400 500 600 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 100 100 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.A 2/4 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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