QSX7TR

QSX7 Datasheet Complex Midium Power Transistor llOutline Parameter Tr1 and Tr2 SOT-457T V 12V CEO SC-95 I 1.5A C TSMT6 llFeatures llInner circuit 1)High current 2)Low saturation voltage V 200mV CE(sat) at I =500mA/I =25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-457T QSX7 2928 TR 180 8 3000 X07 (TSMT6) www.rohm.com 1/6 20160408 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. QSX7 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage 15 V CBO V Collector-emitter voltage 12 V CEO V Emitter-base voltage 6 V EBO I 1.5 A C Collector current *1 I 3 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E Collector cut-off current I V = 15V - - 100 nA CBO CB Emitter cut-off current I V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 85 200 mV CE(sat) C B h DC current gain V = 2V, I = 200mA 270 - 680 - FE CE C V = 2V, I = -200mA, CE E f Transition frequency - 400 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz *1 Pw=1ms Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(25250.8mm) *4 0.9W per element must not be exceeded. www.rohm.com 2/6 20160408 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.