Product Information

BRCB008GWZ-3E2

BRCB008GWZ-3E2 electronic component of ROHM

Datasheet
EEPROM CMOS Over Voltage Detector IC

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.8725 ( AUD 0.96 Inc GST) ea
Line Total: AUD 0.8725 ( AUD 0.96 Inc GST)

5819 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5791 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.7342
10 : AUD 0.7183
100 : AUD 0.6051
500 : AUD 0.598
1000 : AUD 0.5821
2500 : AUD 0.5591
6000 : AUD 0.5184
24000 : AUD 0.4883
48000 : AUD 0.483

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Access Time
Data Retention
Supply Current - Max
Packaging
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BRCB008GWZ-3 General Description 2 BRCB008GWZ-3 is a serial EEPROM of I C BUS Interface Method Features Package W (Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. UCSP30L1 0.94mm x 0.94mm x 0.33mm All controls available by 2 ports of serial clock (SCL) and serial data (SDA) 1.7V to 3.6V Single Power Source Operation most suitable for battery use 1.7V to 3.6V wide limit of operating voltage, possible FAST MODE 400KHz operation 16byte Page Write Mode useful for initial value write at factory shipment Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention Noise Filter Built in SCL / SDA terminal Initial delivery state FFh BRCB008GUZ-3 Capacity Bit Format Type Power Source Voltage Package 8Kbit 1K8 BRCB008GWZ-3 1.7V to 3.6V UCSP30L1 Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100250-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/25 TSZ2211114001 25.Feb.2013 Rev.002Datasheet BRCB008GWZ-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage V -0.3 to +6.5 V CC Power Dissipation Pd 220 (UCSP30L1) mW Derate by 2.2mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +125 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage / Output Voltage is not over 6.5V. Input Voltage/ -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Voltage Output Voltage / Output Voltage is not lower than 1.0V. Junction Temperature Tjmax 150 C Junction temperature at the storage condition Memory Cell Characteristics (Ta=25, Vcc=1.7V to 3.6V) Limit Parameter Unit Min Typ Max (1) Write Cycles 1,000,000 - - Times (1) Data Retention 40 - - Years (1)Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.7 to 3.6 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40 to +85, Vcc=1.7V to 3.6V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage V 0.7Vcc - Vcc+1.0 V 1.7VVcc3.6V IH (2) Input Low Voltage V -0.3 - +0.3Vcc V 1.7VVcc3.6V IL Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VVcc3.6V (SDA) OL1 OL Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.7VVcc2.5V (SDA) OL2 OL Input Leakage Current I -1 - +1 A V =0 to Vcc LI IN Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT Vcc=3.6V, f =400kHz, t =5ms, SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte Write, Page Write Vcc=3.6V, f =400kHz SCL Supply Current (Read) I - - 0.5 mA Random Read, Current Read, Sequential CC2 Read Standby Current I - - 2.0 A Vcc=3.6V, SDASCL=Vcc SB (2) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100250-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/25 TSZ2211115001 25.Feb.2013 Rev.002

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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