Product Information

BM2P091

BM2P091 electronic component of ROHM

Datasheet
AC/DC Converters DC-DC Converter IC PWM w/650V MOSFET

Manufacturer: ROHM
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Price (AUD)

38: AUD 1.6726 ( AUD 1.84 Inc GST) ea
Line Total: AUD 63.5588 ( AUD 69.91 Inc GST)

48 - Global Stock
Ships to you between
Mon. 22 Jul to Fri. 26 Jul
MOQ: 38  Multiples: 1
Pack Size: 1
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48 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 39
Multiples : 1

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BM2P091
ROHM

39 : AUD 1.6326
50 : AUD 1.58

     
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Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2Pxx1 Series General Description Features The PWM type DC/DC converter BM2Pxx1 for AC/DC PWM frequency : 65kHz provide an optimum system for all products that PWM current mode method include an electrical outlet. Burst operation when load is light This IC supports both isolated and non-isolated Frequency reduction function devices, enabling simpler design of various types of Built-in 650V start circuit low-power electrical converters. Built-in 650V switching MOSFET This IC built in a HV starter circuit that tolerates 650V, VCC pin under voltage protection it contributes to low-power consumption. VCC pin overvoltage protection With current detection resistors as external devices, a SOURCE pin Open protection higher degree of design freedom is achieved. Since SOURCE pin Short protection current mode control is utilized, current is restricted in SOURCE pin Leading-Edge-Blanking function each cycle and excellent performance is demonstrated Per-cycle over current protection circuit in bandwidth and transient response. Soft start The switching frequency is 65 kHz. At light load, the Secondary Over current protection circuit switching frequency is reduced and high efficiency is BR pin AC input low voltage protection achieved. BR pin AC input high voltage protection A frequency hopping function is also on chip, which contributes to low EMI. Package W(Typ.) x D(Typ.) x H(Max.) We can design easily, because this IC includes the DIP7K 9.27mm x 6.35mm x 8.63mm switching MOSFET. Pitch 2.54mm(Typ.) Basic specifications DIP7F 9.20mm x 6.35mm x 7.60mm Operating Power Supply Voltage Range: Pitch 2.54mm(Typ.) VCC 8.9V to 26.0V DRAIN: 650V Operating Current: Normal Mode BM2P011:0.950mA (Typ.) BM2P031:0.775mA (Typ.) BM2P051:0.600mA (Typ.) BM2P091:0.500mA (Typ.) Oscillation Frequency: 65kHz (Typ.) o o Operating Temperature: - 40 C to +105 C MOSFET ON Resistance: BM2P011:1.4 (Typ.) Applications BM2P031:2.4 (Typ.) AC adapters and household appliances (vacuum BM2P051:4.0 (Typ.) cleaners, humidifiers, air cleaners, air conditioners, IH BM2P091:8.5 (Typ.) cooking heaters, rice cookers, etc.) Line up Application circuit + Product MOSFET ON resistor FUSE Diode AC BM2P011 1.4 Filter Bridge - 85265Vac - BM2P031 2.4 BM2P051 4.0 BM2P091 8.5 765 DRAINDRAIN VCC ERROR SOURCEBRGNDFB AMP 1234 Figure 1. Application circuit Product structure:Silicon monolithic integrated circuit This product is not designed protection against radioactive rays .w ww.rohm.com TSZ02201-0F2F0A200010-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/21 TSZ22111 14 001 22.Apr.2019 Rev.007 BM2Pxx1 Series Absolute Maximum Ratings(Ta=25C) Parameter Symbol Rating Unit Conditions Maximum applied voltage 1 Vmax1 -0.3 to 30 V VCC Maximum applied voltage 2 Vmax2 -0.3 to 6.5 V SOURCE,FB,BR Maximum applied voltage 3 Vmax3 650 V DRAIN PW=10us, Duty cycle=1% Drain current pulse I 10.40 A DP (BM2P011) PW=10us, Duty cycle=1% Drain current pulse IDP 5.20 A (BM2P031) PW=10us, Duty cycle=1% Drain current pulse I 2.60 A DP (BM2P051) P =10us, Duty cycle=1% W Drain current pulse IDP 1.30 A (BM2P091) Allowable dissipation Pd 2000 mW Operating o Topr -40 to +105 C temperature range o MAX junction temperature Tjmax 150 C Storage o Tstr -55 to +150 C temperature range (Note1) When mounted (on 74.2 mm 74.2 mm, 1.6 mm thick, glass epoxy on double-layer substrate). Reduce to 16 mW/ C when Ta = 25C or above. Operating Conditions(Ta=25C) Parameter Symbol Rating Unit Conditions Power supply voltage range 1 V 8.9 to 26.0 V VCC pin voltage CC Power supply voltage range 2 V to 650 V DRAIN pin voltage DRAIN Electrical Characteristics of MOSFET part (Unless otherwise noted, Ta = 25C, VCC = 15 V) Specifications Parameter Symbol Unit Conditions Min Typ Max MOSFET Block Between drain and V(BR)DDS 650 - - V ID=1mA / VGS=0V source voltage Drain leak current I - - 100 uA V =650V / V =0V DSS DS GS ID=0.25A / VGS=10V On resistance R - 1.4 2.0 DS(ON) (BM2P011) ID=0.25A / VGS=10V On resistance R - 2.4 3.6 DS(ON) (BM2P031) I =0.25A / V =10V D GS On resistance R - 4.0 5.5 DS(ON) (BM2P051) I =0.25A / V =10V D GS On resistance RDS(ON) - 8.5 12.0 (BM2P091) www.rohm.com TSZ02201-0F2F0A200010-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/21 TSZ22111 15 001 22.Apr.2019 Rev.007

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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