Datasheet Controller ICs for High Side NMOSFET BD2270HFV-LB General Description Key Specifications This is the product guarantees long time support in Input voltage range: 2.7V to 5.5V Industrial market. GATE rise time (C =500pF) : 130 s (Typ.) GATE BD2270HFV is an IC with a built-in external N-channel GATE output voltage(V=5V): 13.5V(Typ.) CC MOSFET driver circuit. This IC has a built-in charge Operating current: 50A(Typ.) pump circuit for gate drive and output discharge circuit, Standby current: 5 A (Typ.) enabling configuration of a high side load switch for Operating temperature range: -25 to +85 N-channel MOSFET drive without using any external parts. Package W(Typ.) D(Typ.) H (Max.) In addition, the control input terminal has a built-in HVSOF5 1.60mm x 1.60mm x 0.60mm comparator with hysteresis function, facilitating control of the power up sequence. The space saving type of HVSOF5 package is used. Features Long time support a product for Industrial applications. Built-in charge pump Built-in discharge circuit for output charge Soft start circuit HVSOF5 Built-in comparator with hysteresis function at control input terminal Possible to drive N-channel power MOSFET Applications Industrial Equipment, PCs, PC peripheral devices, digital consumer electronics, etc. Typical Application Circuit V V 3.3V IN SWITCH OUT SWITCH 3.3V Load GATE VCC DISC ON/OFF AEN GND BD2270HFV Lineup GATE output voltage(V =5V) CC Package Orderable Part Number Min. Typ. Max. 10V 13.5V 15V HVSOF5 Reel of 3000 BD2270HFV LBTR Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0E3E0H300410-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/18 TSZ2211114001 21.Feb.2014 Rev.002Datasheet BD2270HFV-LB Block Diagram GATE VCC Ch arg e OSC Pu m p (x3 ) GND DISC Co n tro l AEN Pin Configuration TOP VIEW Pin Description PIN No. PIN name I / O Function 1 VCC - Power input terminal 2 GND - Ground terminal Control input terminal Turn ON the external MOSFET switch with high level input. 3 AEN I High level input > 2.0V, Low level input < 0.8V 4 DISC O Switch output discharge terminal GATE drive output terminal 5 GATE O Used to connect the gate of the external N-channel MOSFET. www.rohm.com TSZ02201-0E3E0H300410-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/18 TSZ2211115001 21.Feb.2014 Rev.002