2SCR543R Datasheet NPN 3.0A 50V Middle Power Transistor llOutline SOT-346T Parameter Value SC-96 V 50V CEO I 3A C TSMT3 llFeatures llInner circuit 1)Suitable for Middle Power Transistor 2) Complementary PNP Types:2SAR543R 3) Low saturation voltage, typically V =350mV(Max.) CE(sat) (I /I =2A/100mA) C B llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346T 2SCR543R 2928 TL 180 8 3000 NR (TSMT3) www.rohm.com 1/6 20150731 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.2SCR543R Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 6 V EBO I 3 A C Collector current *1 I 6 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 100A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 50V - - 1.0 A CBO CB Emitter cut-off current I V = 4V - - 1.0 A EBO EB Collector-emitter saturation voltage V I = 2A, I = 100mA - 130 350 mV CE(sat) C B DC current gain h V = 3V, I = 100mA 180 - 450 - FE CE C V = 10V, I = -500mA, CE E f Transition frequency - 300 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 20 - pF ob f = 1MHz I = 2A, C t Turn-On time - 50 - ns on I = 200mA, B1 I = -200mA, B2 Storage time t - 450 - ns stg V 10V, CC R = 4.7 L t Fall time - 85 - ns f See test circuit *1 P =10ms, Single pulse W *2 Each terminal mounted on a reference land. *3 Mounted on a 40400.7mm ceramic board. www.rohm.com 2/6 20150731 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.