2SAR554RTL

2SAR554R PNP -1.5A -80V Middle Power Transistor Datasheet llOutline SOT-346T Parameter Value SC-96 V -80V CEO I -1.5A C TSMT3 llFeatures llInner circuit 1)Suitable for Middle Power Driver 2)Complementary NPN Types:2SCR554R 3)Low V CE(sat) V =-400mV (Max.) CE(sat) (I /I =-500mA/-25mA) C B llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-346T 2SAR554R 2928 TL 180 8 3000 MH (TSMT3) www.rohm.com 1/6 20190527 - Rev.005 2019 ROHM Co., Ltd. All rights reserved.2SAR554R Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -80 V CBO V Collector-emitter voltage -80 V CEO V Emitter-base voltage -6 V EBO I -1.5 A C Collector current *1 I -3 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -80 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -80 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -80V - - -1.0 A CBO CB Emitter cut-off current I V = -4V - - -1.0 A EBO EB Collector-emitter saturation voltage V I = -500mA, I = -25mA - -200 -400 mV CE(sat) C B DC current gain h V = -3V, I = -100mA 120 - 390 - FE CE C V = -10V, I = 200mA, CE E f Transition frequency - 340 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 15 - pF ob f = 1MHz I = -700mA, C t Turn-On time - 50 - ns on I = -70mA, B1 I = 70mA, B2 Storage time t - 300 - ns stg V -10V, CC R = 15 L t Fall time - 50 - ns f See test circuit *1 P =10ms ,Single pulse W *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(40400.7mm). www.rohm.com 2/6 20190527 - Rev.005 2019 ROHM Co., Ltd. All rights reserved.