Preliminary Datasheet RJH65T46DPQ-A0 R07DS1259EJ0100 650V - 40A - IGBT Rev.1.00 Application: Power Factor Correction circuit May 18, 2015 Features Low collector to emitter saturation voltage V = 1.8 V typ. (at I = 40 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin wafer technology (G7H series) High speed switching t = 45 ns typ. (at V = 400 V, V = 15 V , I = 40 A, Rg = 10 , Ta = 25CInductive load) f CC GE C Operation frequency (20kHz f 100kHz) Not guarantee short circuit withstand time Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 650 V Gate to emitter voltage V 30 V GES Collector current Tc = 25 C IC 80 A Tc = 100 C I 40 A C Note1 Collector peak current iC(peak) 300 A Collector to emitter diode Tc = 25 C I 30 A DF Forward current Tc = 100 C IDF 15 A Note1 Collector to emitter diode forward peak current i (peak) 100 A DF Collector dissipation PC 340.9 W Junction to case thermal impedance (IGBT) j-c 0.44 C/W Junction to case thermal resistance (Diode) j-cd 1.33 C/ W Note2 Junction temperature Tj 175 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Please use this device in the thermal conditions which the junction temperature does not exceed 175C. Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175C. R07DS1259EJ0100 Rev.1.00 Page 1 of 9 May 18, 2015 RJH65T46DPQ-A0 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max UnitTest Conditions Zero gate voltage collector current ICES / IR 100 A VCE = 650 V, VGE = 0 / Diode reverse current Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage VGE(off) 4.0 7.0 V VCE = 10V, IC = 1.33 mA Note3 Collector to emitter saturation voltage V 1.8 2.4 V I = 40 A, V = 15V CE(sat) C GE Input capacitance Cies 3000 pF VCE = 25 V VGE = 0 Output capacitance Coes 92 pF f = 1 MHz Reveres transfer capacitance Cres 55 pF Total gate charge Qg 138 nC VGE = 15 V VCE = 400 V Gate to emitter charge Qge 22 nC IC = 40 A Gate to collector charge Qgc 57 nC Turn-on delay time td(on) 45 ns VCC = 400 V VGE = 15 V Rise time t 30 ns r IC = 40 A Turn-off delay time td(off) 170 ns Rg = 10 Fall time t 45 ns f TC = 25 C Turn-on loss energy Eon 0.45 mJ Note4 Inductive load Turn-off loss energy E 0.55 mJ off Total switching energy Etotal 1.00 mJ Turn-on delay time t 45 ns V = 400 V d(on) CC V = 15 V GE Rise time tr 30 ns I = 40 A C Turn-off delay time t 185 ns d(off) Rg = 10 Fall time tf 50 ns T = 150 C C Turn-on loss energy E 0.57 mJ on Note4 Inductive load Turn-off loss energy Eoff 0.63 mJ Total switching energy E 1.20 mJ total Note3 FRD forward voltage V 1.7 2.2 V I = 15 A F F FRD reverse recovery time trr 100 ns IF = 15 A, diF/dt = 300 A/ s Notes: 3. Pulse test 4. Switching time test circuit and waveform are shown below. R07DS1259EJ0100 Rev.1.00 Page 2 of 9 May 18, 2015