Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features Low collector to emitter saturation voltage V = 1.37 V typ. (I = 40 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching t = 85 ns typ. (at I = 30 A, V = 400 V, V = 15 V, Rg = 5 , Ta = 25C, inductive load) r C CE GE Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) 1 2 3 E Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage V 600 V CES Gate to emitter voltage V 30 V GES Collector current Tc = 25 C I 80 A C Tc = 100 C I 40 A C Note1 Collector peak current ic(peak) 160 A Note2 Collector to emitter diode forward peak current i (peak) 100 A DF Collector dissipation P 260.4 W C Junction to case thermal impedance (IGBT) j-c 0.48 C/W Junction to case thermal impedance (Diode) j-c 2.0 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% R07DS0055EJ0300 Rev.3.00 Page 1 of 7 Nov 24, 2010 RJH60F5DPK Preliminary Electrical Characteristics (Tj = 25C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current I 100 A V = 600V, V = 0 CES CE GE Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4 8 V V = 10 V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.37 1.8 V I = 40 A, V = 15 V CE(sat) C GE Note3 V 1.7 V I = 80 A, V = 15 V CE(sat) C GE Input capacitance Cies 2780 pF V = 25 V CE V = 0 V GE Output capacitance Coes 122 pF f = 1 MHz Reverse transfer capacitance Cres 43 pF Switching time t 53 ns I = 30 A, d(on) C V = 400 V, V = 15 V t 145 ns CE GE r Note3 Rg = 5 , t 105 ns d(off) Inductive load t 85 ns f Note3 C-E diode forward voltage V 1.6 2.1 V I = 20 A ECF1 F Note3 V 1.8 V I = 40 A ECF2 F C-E diode reverse recovery time t 140 ns I = 20 A rr F di /dt = 100 A/ s F Notes: 3. Pulse test R07DS0055EJ0300 Rev.3.00 Page 2 of 7 Nov 24, 2010