Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400 600V - 22A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V = 1.6 V typ. (at I = 22 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching t = 70 ns typ. (at V = 300 V, V = 15 V, I = 22 A, Rg = 5 , Ta = 25C, inductive load) f CC GE C Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage V / V 600 V CES R Gate to emitter voltage V 30 V GES Collector current Tc = 25C I 45 A C Tc = 100C I 22 A C Note1 Collector peak current ic(peak) 90 A Collector to emitter diode forward current I 22 A DF Note1 Collector to emitter diode forward peak current i (peak) 90 A DF Note2 Collector dissipation P 140 W C Note2 Junction to case thermal resistance (IGBT) j-c 0.89 C/ W Note2 Junction to case thermal resistance (Diode) j-cd 2.3 C/ W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0155EJ0400 Rev.4.00 Page 1 of 9 Apr 19, 2012 RJH60D0DPK Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown V 600 V I =10 A, V = 0 BR(CES) C GE voltage Zero gate voltage collector current I / I 5 A V = 600 V, V = 0 CES R CE GE / Diode reverse current Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4.0 6.0 V V = 10 V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.6 2.2 V I = 22 A, V = 15 V CE(sat) C GE Note3 V 2.0 V I = 45 A, V = 15 V CE(sat) C GE Input capacitance Cies 1050 pF V = 25 V CE V = 0 Output capacitance Coes 70 pF GE f = 1 MHz Reveres transfer capacitance Cres 30 pF Total gate charge Qg 46 nC V = 15 V GE V = 300 V CE Gate to emitter charge Qge 8 nC I = 22 A C Gate to collector charge Qgc 16 nC Turn-on delay time t 40 ns V = 300 V d(on) CC V = 15 V Rise time t 20 ns GE r I = 22 A C Turn-off delay time t 80 ns d(off) Rg = 5 Fall time t 70 ns f Inductive load Turn-on energy E 0.23 mJ on Turn-off energy E 0.29 mJ off Total switching energy E 0.52 mJ total Short circuit withstand time t 3.0 5.0 s V 360 V , V = 15 V sc CC GE Note3 FRD forward voltage V 1.4 1.9 V I = 22 A F F FRD reverse recovery time t 100 ns I = 22 A rr F di /dt = 100 A/ s FRD reverse recovery charge Q 0.15 C F rr FRD peak reverse recovery current I 4.3 A rr Notes: 3. Pulse test R07DS0155EJ0400 Rev.4.00 Page 2 of 9 Apr 19, 2012