Product Information

HIP2211EVAL2Z

HIP2211EVAL2Z electronic component of Renesas

Datasheet
Power Management IC Development Tools HIP2211 EVAL BOARD 1 8 LD SOIC - RoHS COMPLIANT

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 132.0834 ( AUD 145.29 Inc GST) ea
Line Total: AUD 132.0834 ( AUD 145.29 Inc GST)

32 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
32 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1
1 : AUD 117.7777

     
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Users Manual HIP2211EVAL2Z Users Manual: Evaluation Board Industrial Analog and Power All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by Renesas Electronics Corp. without notice. Please review the latest information published by Renesas Electronics Corp. through various means, including the Renesas Electronics Corp. website ( Users Manual HIP2211EVAL2Z Evaluation Board The HIP2211EVAL2Z evaluation board is designed to provide a quick and comprehensive method for evaluating the HIP2211 100V 3A source, 4A sink high-frequency half-bridge driver for driving the gates of two N-channel MOSFETs in a half-bridge configuration. Two N-channel MOSFETs (with dual footprint supporting multiple packages such as TO220 and DPAK) and an inductor-capacitor LC filter are included on the evaluation board to allow for the evaluation of a half-bridge driven load such as a synchronous buck switching regulator. The HIP2211 half-bridge driver is offered in an 8 Ld SOIC, 8 Ld DFN, or 10 Ld DFN package (with enhanced thermal EPAD). The HIP2211EVAL2Z evaluation board is designed for the 8 Ld SOIC package. It operates from a supply voltage of 6V to 18V DC with the capability of driving both the high-side and the low-side MOSFETs in a 100V half-bridge configuration. Key Features 3A source and 4A sink NMOS gate drivers Internal level shifter and bootstrap diode for gate driver on high-side NFET Up to 100V high-side bootstrap reference 6V to 18V bias supply operation Fast 15ns typical propagation delay and 2ns typical propagation delay match supports up to 1MHz operation Specifications This board is optimized for the following operating conditions: V supply: 12V nominal DD V supply input: 0V to 60V BRIDGE PWM switching frequency: 100kHz Peak gate drive current: 3A source and 4A sink Ordering Information Part Number Description HIP2211EVAL2Z HIP2211 8 Ld SOIC evaluation board Related Literature For a full list of related documents, visit our website: HIP2211, HIP2210 device pages 12V VDD 1 100V HB VCC 2 HO 3 HI PWM 5 HS HIP2211 4 VOUT DC/DC LI Controller LO 6 8 VSS 7 VSS Figure 1. HIP2211 Typical Application Block Diagram R12UZ0071EU0100 Rev.1.00 Page 2 of 16 Feb.11.20

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8543.70.00 Other machines and apparatus Free
13 Signal processors (graphic equalisers, crossovers etc.) 91 Other Free

9027.10.00 Instruments and apparatus for physical or chemical analysis (eg, polarimeters, refractometers, spectrometers, gas or smoke analysis apparatus); instruments and apparatus for measuring or checking viscosity, porosity, expansion, surface tension or the like; instruments and apparatus for measuring or checking quantities of heat, sound or light (including exposure meters); microtomes Free

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CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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