Product Information

F1162NBGI

F1162NBGI electronic component of Renesas

Datasheet
Up-Down Converters RF MIXER 0.35 UM SIGE BICMOS

Manufacturer: Renesas
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 28.0952 ( AUD 30.9 Inc GST) ea
Line Total: AUD 28.0952 ( AUD 30.9 Inc GST)

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
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0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 1
Multiples : 1

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F1162NBGI
Renesas

1 : AUD 28.0952
10 : AUD 24.7924
25 : AUD 23.763
80 : AUD 20.9371
230 : AUD 19.9096
490 : AUD 18.6251
980 : AUD 17.0837

0 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

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F1162NBGI
Renesas

1 : AUD 15.7462
10 : AUD 14.7731
25 : AUD 14.2069
490 : AUD 14.1892

     
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DATASHEET RF to IF Dual Downconverting Mixer 2300 - 2700 MHz F1162NBGI FEATURES GENERAL DESCRIPTION Dual Path for Diversity Systems This document describes the specifications for the TM Ideal for Multi-Carrier Systems IDTF1162 Zero-Distortion RF to IF Downconverting 8.9 dB Gain Mixer. This device is part of a series of mixers offered Ultra linear +43 dBm IP3 +43 dBm IP3 with high side or low side injection options for all UTRA OO Low NF < 10 dB bands. See the Part Matrix for the details of all devices 200 output impedance in this series. Ultra high +13 dBm P1dB I The F1162 dual channel device is designed to operate PPiinn CCoommppaattiibbllee w/existing solutions with a single 5V supply. It is optimized for operation in 6x6 36 pin package a Multi-mode, Multi-carrier BaseStation Receiver for RF CCoonnssttaanntt LLOO PPoorrtt ZZ iinn SSTTBBYY mmooddee bands from 2300 - 2700 MHz with Low Side or High < 200 nsec settling from Power Down Side Injection. IF frequencies from 50 to 500 MHz are Low Current Mode : I = 230 mA I = 230 mA CCCC supported. Nominally, the device offers +43 dBm Standard Mode: I = 330 mA CC Output IP3 with 330 mA of I . Alternately one can CC NOTE production BOM on p. 25 adjust 4 resistor values and a toggle pin to run the device in low current mode with +38 dBm Output IP3 and 230 mA of I . CC DEVICE BLOCK DIAGRAM COMPETITIVE ADVANTAGE In typical basestation receivers the RF to IF mixer dominates the linearity performance for the entire RF IN A TM receive system. The Zero-Distortion family of mixers IF OUT A dramatically improve the maximum signal levels (IM 3 tones) that the BTS can withstand at a desired Signal to STBY RF VCO Bias 2 Noise Ratio (SNR.) Alternately, one can run the device LOISET Control in Low Current Mode to reduce Power consumption LCMODE TM significantly. Zero-Distortion technology allows RF IN B realization of either benefit. IF OUT B IP3 : 11 dB STD O Mode, 5 dB LC Mode Dissipation: 40% LC, 15% STD Mode Allows for higher RF gain improving Sensitivity ORDERING INFORMATION Omit IDT Tape & 0.8 mm height PART MATRIX prefix Reel package Part RF freq UTRA bands IF freq Typ. Injection range range Gain 5,6,8,12,13,14,17 F1100 698 - 915 50 - 450 8.5 High Side IDTF1162NBGI8 ,19,20 5,6,8,12,13,14,17 F1102 698 - 915 50 - 250 8.5 Both ,19,20 Green RF product Line Industrial 1,2,3,4,9,10, 33, Temp range F1150 1700 - 2200 50 - 450 8.5 High Side 34,35, 36, 37,39 1 1,2,3,4,9,10,11 , 1 1 F1152 1400 - 2200 21 , 24 , 33, 50 - 350 8.5 Low Side 34,35, 36, 37,39 FF11116622 22330000 22770000 77,,3388,,4400,,4411 5500 550000 88..99 BBootthh 1 with High side injection TM IDT Zero-Distortion Mixer 1 Rev1, July 2012 DATASHEET RF to IF Dual Downconverting Mixer 2300 - 2700 MHz F1162NBGI ABSOLUTE MAXIMUM RATINGS VCC to GND -0.3V to +5.5V STBY, LC -0.3V to (VCC + 0.3V) MODE IF A+, IF B+, IF A-, IF B-, LO1 ADJ, LO2 ADJ -0.3V to (VCC + 0.3V) LO IN, LO IN ALT, RF A, RF B -0.3V to +0.3V IF BiasA, IF BiasB to GND -0.3V to +0.3V RF Input Power (RF IN A+, A-, B+, B- ) +20dBm Continuous Power Dissipation 2.2W (Junction Ambient) +35C/W JA (Junction Case) The Case is defined as the exposed paddle +2.5C/W JC Operating Temperature Range (Case Temperature) T = -40C to +100C C Maximum Junction Temperature 150C Storage Temperature Range -65C to +150C Lead Temperature (soldering, 10s) . +260C Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TM IDT Zero-Distortion Mixer 2 Rev1, July 2012

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
CEL (RENESAS)
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY

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