Preliminary Datasheet 2SB1691 R07DS0272EJ0400 Silicon PNP Epitaxial Planer Rev.4.00 Low Frequency Power Amplifier Jan 10, 2014 Features Small size package: MPAK (SC59A) Large Maximum current: I = 1 A C Low collector to emitter saturation voltage: V = 0.3 V max.(at I /I = 0.5 A/0.05 A) CE(sat) C B High power dissipation: P = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) C Complementary pair with 2SD2655 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is WL-. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base Voltage V 60 V CBO Collector to emitter voltage V 50 V CEO Emitter to base voltage V 6 V EBO Collector current I 1 A C Collector peak current ic(peak) 2 A Collector power dissipation P 800* mW C Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: *When using alumina ceramic board (25 x 60 x 0.7 mm) R07DS0272EJ0400 Rev.4.00 Page 1 of 5 Jan 10, 2014 2SB1691 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Condition Collector to base breakdown voltage V 60 V I = 10 A, I = 0 (BR)CBO C E Collector to emitter breakdown voltage V 50 V I = 1 mA, R = (BR)CEO C BE Emitter to base breakdown voltage V 6 V I = 10 A, I = 0 (BR)EBO E C Collector cutoff current I 10 0 nA V = 50 V, I = 0 CBO CB E Emitter cutoff current I 10 0 nA V = 5 V, I = 0 EBO EB C DC current transfer ratio h 200 500 V = 2 V, I = 0.1 A FE CE C I = 0.5 A, I = 0.05 A, C B Collector to emitter saturation voltage V 0.2 0.3 V CE(sat) Pulse test I = 0.5 A, I = 0.05 A, C B Base to emitter saturation voltage V 0.95 1.2 V BE(sat) Pulse test Gain bandwidth product f 310 MHz V = 2 V, I = 0.1 A T CE C V = 10 V, I = 0, CB E Collector output capacitance Cob 9.8 pF f = 1 MHz Main Characteristics Maximum Collector Dissipation Curve Typical Output Characteristics (1) 1200 200 Pulse When using alumina ceramic board S = 25 mm x 60 mm, t = 0.7 mm 1000 800 100 400 200 0 50 100 150 200 02 4 6 8 10 Collector to Emitter Voltage V (V) Ambient Temperature Ta (C) CE Typical Output Characteristics (2) Typical Transfer Characteristics 500 1000 V = 2 V CE Pulse 400 100 300 200 10 100 Pulse 1 0 0.2 0.4 0.6 0.8 1.0 0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage V (V) Base to Emitter Voltage V (V) CE BE R07DS0272EJ0400 Rev.4.00 Page 2 of 5 Jan 10, 2014 IB = 50 A 100 A IB = 1 mA 2 mA 150 A 200 A 3 mA 350 A 250 A 300 A 4 mA 5 mA 6 mA 7 mA Collector Current I (mA) C Collector Power Dissipation Pc (mW) Collector Current I (mA) Collector Current I (mA) C C