TQP3M9040 1500 2300 MHz Dual LNA Product Description The TQP3M9040 is a high linearity, ultra-low noise figure dual device amplifier in a 4 x 4 mm package. At 1950 MHz in a balanced configuration, this LNA provides 17.7 dB gain, 21.8 dBm IIP3 and 0.62 dB noise figure. The part does not require a negative supply for operation and is bias adjustable for both 16-pin 4mmx4mmQFN Package drain current and voltage. The device is housed in a green/RoHS-compliant industry standard QFN package. Key Features The TQP3M9040 consists of a single monolithic GaAs E-pHEMT die and integrates bias circuitry as 0.18 dB NFmin (Single Channel) at 1950 MHz well as shut-down capability allowing the LNA to be 15002300 MHz operational bandwidth useful for both FDD and TDD applications. Gain = 18 dB at 1950 MHz +21.8 dBm Input IP3 The TQP3M9040 is optimized for the 1500 2300 Integrated shut-down biasing feature MHz band, but can be used outside of the band. Bias adjustable Qorvo offers pin-compatible dual LNAs for the 500 1500 MHz band (TQP3M9039) and 2.3 4.0 GHz Does not require negative voltage supply (TQP3M9041). The balanced amplifier is optimized 4x4 mm 16-pin QFN plastic package for high performance receivers in wireless infrastructure and can be used for base-station transceivers or tower-mounted amplifiers Applications Base Station Receivers Tower Mount Amplifiers Functional Block Diagram Balanced Amplifiers Pin 1 Reference Mark FDD-LTE, TDD-LTE, WCDMA, CDMA, GSM General Purpose Wireless 16 15 14 13 RFin1 RFout1 1 12 Vg1 Vd1 GND 2 11 GND Ordering Information GND 3 10 GND Part No. Description RFin2 RFout2 TQP3M9040 15002300 MHz Dual LNA 4 9 Vg2 Vd2 TQP3M9040-PCB 17002000 MHz Evaluation Board 5 6 7 8 Standard T/R size = 2500 pieces on a 13 reel Backside Paddle RF/DC GND Top View Data Sheet, Rev H, Nov 6, 2020 Subject to change without notice 1 of 12 www.qorvo.com DC DC Bias2 Bias1 Vpd2 Vpd1 Ictrl2 Ictrl1 NA NA TQP3M9040 1500 2300 MHz Dual LNA Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Storage Temperature 65 to 150C Vpd 0 +5 V Drain Voltage (V ) +7 V Vg 0 +0.5 +1 V d Idd (Vd = 5V), single channel 300 mA Vd +2 +5 V I , single channel 57 80 mA Input Power (CW) +22 dBm d Operating Temp. Range 40 +105 C Input Power (DC off condition) +22 dBm 6 Input P0wer (DC off condition & T (for>10 hrs MTTF) 190 C ch +30 dBm 10% Duty Cycle) Electrical specifications are measured at specified test conditions. Operation of this device outside the parameter ranges given above Specifications are not guaranteed over all recommended operating may cause permanent damage. conditions. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 1500 2300 MHz Test Frequency 1950 MHz Gain 16.5 17.7 19 dB Output P1dB +20.8 dBm Input IP3 Pin=13 dBm/tone, f=1 MHz +17 +21.8 dBm Output IP3 Pout=+5 dBm/tone, f=1 MHz +39.8 dBm (2) Noise Figure Balanced Configuration 0.62 1 dB Drain Voltage, V +4.35 V d Drain Current, I Single Channel 35 57 80 mA d On-State 0 +0.3 V Power Down Control Voltage, V pd Off-State +2.1 Vd V Thermal Resistance, jc Junction to case - per channel 53 C/W Notes: 1. Test conditions unless otherwise noted: V = +4.35V, Temp.=+25C, tuned balanced configuration. d 2. The Noise Figure is de-embedded to the input pin of the input hybrid coupler. Data Sheet, Rev H, Nov 6, 2020 Subject to change without notice 2 of 12 www.qorvo.com