Dual Photodiode PR5001 2 Photodiodes in One Chip for Spacially Resolved Light Detection. The PR5001 is a dual-element Si photodiode FEATURES moulded into a small plastic leadless optical Low dark current package. Produced as one chip, the photodi- Low capacitance odes offer a very good symmetry, low dark cur- Good matching between photodiodes rent and high sensitivity. Apart from the standard version PR5001, the TYPICAL APPLICATIONS PR5001-ARC features an antireflective layer, Laser beam alignment smoothing the spectral sensitivity and provid- Opto encoders ing a high good matching from part to part. Position detection EDGE DETECTOR CIRCUIT KEY CHARACTERISTICS Parameter Conditions Typ Units Spectral response 500 - 1000 nm range Peak sensitivity 820 nm 0.53 A/W Area C1, C2 0.84 mm Dark current Id T = 27C 10 pA Terminal Vr = 10 V 34 pF capacitance Ct f = 1 MHz PREMA Semiconductor GmbH 2006-2018 I rev. 3218 Page 1/6Dual Photodiode PR5001 Electrical and optical Characteristics All characteristics apply to both PR5001 and PR5001-ARC, unless noted otherwise. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Min Max Units T Operating ambient temperature -40 85 C A T Storage temperature -40 85 C S T Soldering peak temperature 260 C peak P Total Power Dissipation 100 mW tot ELECTRICAL CHARACTERISTICS Ta = 27C, unless otherwise noted. Symbol Parameter Conditions Min Typ Max Units V reverse voltage V(A) V(C) 28 V r (A-C) A active area (geometrical) C1, C2 width 1.145 m PD height 737 m inactive area (pads) 0,05 mm effective active area 0.79 mm I dark current C1, C2 V = 10V 10 pA d r I /T temperature coefficient of dark C1, C2 V = 10V 10.0 %/K d r current peak sensitivity wavelength C1, C2 820 nm peak S peak sensitivity C1, C2 0.53 A/W peak C zero-bias junction capacitance C1, C2 V = 0V, f = 1 MHz 125 pF j0 r Cj biased junction capacitance C1, C2 V = 10V, f = 1 MHz 34 pF r PREMA Semiconductor GmbH 2006-2018 I rev. 3218 Page 2/6