This product complies with the RoHS Directive (EU 2002/95/EC).
DRA9A14E
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC9A14E
DRA5A14E in SSMini3 type package
Features Package
Low collector-emitter saturation voltage V
Code
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
SSMini3-F3-B
Eco-friendly Halogen-free package
Pin Name
1: Base
Packaging 2: Emitter
3: Collector
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: GH
Absolute Maximum Ratings T = 25C
a
Internal Connection
Parameter Symbol Rating Unit
C
Collector-base voltage (Emitter open) V 50 V
CBO R
1
B
Collector-emitter voltage (Base open) V 50 V
CEO
R
2
E
Collector current I 80 mA
C
Total power dissipation P 125 mW
T
R 10 k
1
Resistance value
Junction temperature T 150 C
j
R 10 k
2
Storage temperature T 55 to +150 C
stg
Electrical Characteristics T = 25C3C
a
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V I = 10 A, I = 0 50 V
CBO C E
Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V
CEO C B
Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 A
CBO CB E
Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 A
CEO CE B
Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.5 mA
EBO EB C
Forward current transfer ratio h V = 10 V, I = 5 mA 35
FE CE C
Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V
CE(sat) C B
Input voltage (ON) V V = 0.2 V, I = 5 mA 2.1 V
I(on) CE C
Input voltage (OFF) V V = 5 V, I = 100 A 0.8 V
I(off) CE C
Input resistance R 30% 10 +30% k
1
Resistance ratio R / R 0.8 1.0 1.2
1 2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2011 Ver. BED
1This product complies with the RoHS Directive (EU 2002/95/EC).
DRA9A14E
DRA9A14E_hFE-IC
DRA9A14E_PT-Ta DRA9A14E_IC-VCE
P T I V h I
T a C CE FE C
140
150 100
T = 25C
a
V = 10 V
CE
120
80 T = 85C
a
0.6 mA
0.7 mA 100
100
25C
60 I = 0.8 mA
B
80
0.5 mA
0.4 mA
60
40
0.3 mA
30C
50
40
0.2 mA
20
20
0.1 mA
0
0 0
1 2
10 1 10 10
0 40 80 120 160 200 0 2 4 6 8 10 12
( )
Ambient temperature T C
Collector-emitter voltage V (V) Collector current I (mA)
a
CE C
DRA9A14E_I -V
DRA9A14E_VCEsat-IC O IN DRA9A14E_VIN-IO
V I I V V I
CE(sat) C O IN IN O
2
10
10 10
I / I = 20 V = 5 V
V = 0.2 V
C B O
O
T = 85C
a
1
10
1
25C
T = 30C
a
T = 85C 1
a 10
25C
25C
1
10 1
85C
30C
30C
2
10
2 3 1
10 10 10
1 2 1 2
10 1 10 10 0 0.5 1.0 1.5 2.0 2.5 10 1 10 10
Output current I (mA)
Collector current I (mA) Input voltage V (V) O
C IN
Ver. BED
2
Collector-emitter saturation voltage V (V)
Total power dissipation P (mW)
CE(sat)
T
( )
Output current I mA
Collector current I (mA)
O
C
Forward current transfer ratio h
Input voltage V (V)
FE
IN