Doc No. TT4-EA-11493 Revision. 3 Product Standards Switching Diode DA2S10100L DA2S10100L Silicon epitaxial planar type Unit: mm For high speed switching circuits 0.8 0.13 DA2J101 in SSMini2 type package 2 Features Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: A1 0.3 0.6 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic SSMini2-F5-B JEITA SC-79 Code SOD-523 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 80 V Internal Connection Maximum peak reverse voltage VRM 80 V 2 Forward current IF 100 mA Peak forward current IFM 225 mA *1 IFSM 500 mA Non-repetitive peak forward surge current Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 1 Note) *1: t = 1 s Page 1 of 4 Established : 2009-09-16 Revised : 2013-05-31 1.2 1.6Doc No. TT4-EA-11493 Revision. 3 Product Standards Switching Diode DA2S10100L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA 0.92 1.20 V Reverse voltage VR IR = 100 A 80 V Reverse current IR VR = 80 V 100 nA Terminal capacitance Ct VR = 0 V , f = 1 MHz 1.2 pF IF = 10 mA, VR = 6 V *1 trr 3 ns Reverse recovery time Irr = 0.25 x IR Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1: trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 0.25 I rr R t = 2 s I = 10 mA p F t = 0.35 ns V = 6 V r Pulse Generator Wave Form Analyzer R = 0.05 (PG-10N) (SAS-8130) R = 50 R = 50 s i Page 2of 4 Established : 2009-09-16 Revised : 2013-05-31