Product Information

Q65110A2467

Q65110A2467 electronic component of OSRAM

Datasheet
LED IrLED 860nm 2-Pin Chip LED

Manufacturer: OSRAM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

2000: AUD 0.6373 ( AUD 0.7 Inc GST) ea
Line Total: AUD 1274.6 ( AUD 1402.15 Inc GST)

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 2000
Multiples : 2000
2000 : AUD 0.6373

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Illumination Color
Brand
Viewing Angle
Fall Time
Rise Time
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

2014-01-15 High Power Infrared Emitter (850 nm) IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 / gem: OS-PCN-2009-021-A2 SFH 4255 Features: Besondere Merkmale: High Power Infrared LED Infrarot LED mit sehr hoher Ausgangsleistung Short switching times Kurze Schaltzeiten Applications Anwendungen Infrared Illumination for cameras Infrarotbeleuchtung fr Kameras IR data transmission IR Datenbertragung Sensor technology Sensorik Notes Hinweise Depending on the mode of operation, these devices Je nach Betriebsart emittieren diese Bauteile emit highly concentrated non visible infrared light hochkonzentrierte, nicht sichtbare which can be hazardous to the human eye. Products Infrarot-Strahlung, die gefhrlich fr das which incorporate these devices have to follow the menschliche Auge sein kann. Produkte, die diese safety precautions given in IEC 60825-1 and IEC Bauteile enthalten, mssen gem den 62471. Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Ordering Information Bestellinformation Type: Radiant Intensity Ordering Code Typ: Strahlstrke Bestellnummer I = 100 mA, t = 20 ms F p I mW/sr e SFH 4255 20 ( 10) Q65110A2467 Note: Measured at a solid angle of = 0.01 sr Anm.: Gemessen bei einem Raumwinkel = 0.01 sr 2014-01-15 1Version 1.1 / gem: OS-PCN-2009-021-A2 SFH 4255 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operation and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 5V R Sperrspannung Forward current I 100 mA F Durchlassstrom Surge current I 1A FSM Stostrom (t = 200 s, D = 0) p Total power dissipation P 180 mW tot Verlustleistung ESD withstand voltage V 2kV ESD ESD Festigkeit (acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM) 1) page 11 Thermal resistance junction - ambient R 450 K / W thJA Wrmewiderstand Sperrschicht - Umgebung 1) Seite 11 Thermal resistance junction - soldering point R 200 K / W thJS 2) page 11 2) Seite 11 Wmewiderstand Sperrschicht - Ltstelle Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Emission wavelength (typ) 860 nm peak Zentrale Emissionswellenlnge (I = 100 mA, t = 20 ms) F p Centroid Wavelength (typ) 850 nm centroid Schwerpunktwellenlnge der Strahlung (I = 100 mA, t = 20 ms) F p Spectral bandwidth at 50% of I (typ) 30 nm max Spektrale Bandbreite bei 50% von I max (I = 100 mA, t = 20 ms) F p 2014-01-15 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
AMS OSRAM
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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