The NYC0102BLT1G is a dual N-channel logic level enhancement mode Field Effect Transistor (FET) made by ON Semiconductor. The NYC0102BLT1G offers advanced trench technology which gives it improved RDS(ON), enhanced ESD protection and ultra-low gate resistances. The low gate resistances make the device ideally suited for high-speed switching applications. It also has an enhanced level of resistance to gate oxide breakdown. This guarantees the device's protect and long life. The NYC0102BLT1G has an 18V drain-to-source voltage and a 10V gate-to-source voltage. The device is RoHS compliant and will operate temperatures up to 175°C.