The NUD4700SNT1G is an N-channel enhancement-mode power MOSFET from ON Semiconductor. It is suitable for use in power management, switching, and voltage regulation applications. The device is rated for a drain-source breakdown voltage of 30V, RDS (on) of 200 mOhm, an ID of 5.4A, and a maximum total power dissipation of 8W. It also features fast switching times, low gate-source capacitance, and low on-state resistance.