NSS60601MZ4 Low V Transistor, CE(sat) NPN, 60 V, 6.0 A 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These are designed CE(sat) NSS60601MZ4 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 800 mW A Derate above 25C 6.5 mW/C Thermal Resistance, R (Note 1) 155 C/W JA Junction toAmbient Total Device Dissipation P (Note 2) D T = 25C 2 W A Derate above 25C 15.6 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 64 Total Device Dissipation P mW Dsingle (Single Pulse < 10 sec.) (Note 3) 710 Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 7.6 mm , 1 oz. copper traces. 2 2. FR4 645 mm , 1 oz. copper traces. 3. Thermal response. ORDERING INFORMATION Device Package Shipping NSS60601MZ4T1G SOT223 1,000 / Tape & Reel (Pb Free) NSV60601MZ4T1G* SOT223 1,000 / Tape & Reel (Pb Free) NSS60601MZ4T3G SOT223 4,000 / Tape & Reel (Pb Free) NSV60601MZ4T3G* SOT223 4,000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable.