Product Information

NBA3N011SSNT1G

NBA3N011SSNT1G electronic component of ON Semiconductor

Datasheet
LVDS Interface IC 3.3 V Auto Grade LVDS Driver

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 4.2815 ( AUD 4.71 Inc GST) ea
Line Total: AUD 4.2815 ( AUD 4.71 Inc GST)

80607 - Global Stock
Ships to you between
Wed. 17 Jul to Fri. 19 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1613 - Global Stock


Ships to you between Thu. 11 Jul to Wed. 17 Jul

MOQ : 1
Multiples : 1

Stock Image

NBA3N011SSNT1G
ON Semiconductor

1 : AUD 4.994
10 : AUD 4.606
25 : AUD 4.316
100 : AUD 3.69
250 : AUD 3.336
500 : AUD 3.08
1000 : AUD 2.716

27 - Global Stock


Ships to you between
Thu. 18 Jul to Tue. 23 Jul

MOQ : 1
Multiples : 1

Stock Image

NBA3N011SSNT1G
ON Semiconductor

1 : AUD 4.1129
10 : AUD 4.0232
30 : AUD 3.9624
100 : AUD 3.7154

80607 - Global Stock


Ships to you between Wed. 17 Jul to Fri. 19 Jul

MOQ : 1
Multiples : 1

Stock Image

NBA3N011SSNT1G
ON Semiconductor

1 : AUD 4.2815
10 : AUD 3.8923
25 : AUD 3.68
100 : AUD 3.0962
250 : AUD 2.8308
500 : AUD 2.76
1000 : AUD 2.4415
3000 : AUD 2.4062
6000 : AUD 2.3354

     
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Product Category
RoHS - XON
Icon ROHS
Type
Number of Drivers
Number of Receivers
Data Rate
Input Type
Output Type
Supply Voltage - Max
Supply Voltage - Min
Minimum Operating Temperature
Maximum Operating Temperature
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Package / Case
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Packaging
Product
Series
Brand
Operating Supply Current
Pd - Power Dissipation
Propagation Delay Time
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NBA3N011S 3.3 V Automotive Grade LVDS Driver Description The NBA3N011S is a Low Voltage Differential Signaling (LVDS) driver for low power and high data rate applications. The device www.onsemi.com accepts LVCMOS/TTL input and translates it to LVDS and is designed to support data rates higher than 400 Mbps (200 MHz). The driver provides low EMI with a typical output swing of 350 mV. MARKING The device can be paired with its companion single line receiver DIAGRAM NBA3N012C or with any other LVDS receiver for high speed LVDS 5 interface. SOT235 011AYW DT SUFFIX The LVDS output is designed as a 3.5 mA (typical) current mode CASE 527AH driver allowing low power dissipation even at the high frequency. 1 NBA3N011S is offered in a 5 lead SOT23 package, shipping in 3000 pcs tape & reel. 011 = Specific Device Code A = Assembly Code Features Y = Year W = Work Week Compatible with TIA/EIA644A Standard = PbFree Package Automotive Grade AECQ100 Grade 1 (Note: Microdot may be in either location) > 400 Mbps (200 MHz) Data Rate Operating Range: V = 3.3 V 0.3 V DD LOGIC DIAGRAM Maximum 700 ps Differential Skew Q Maximum Propagation Delay of 1.5 ns Low Power Dissipation (Typical 23 mW 3.3 V) IN SOT235 Lead Package with Pinout optimized for easy PCB Layout Q 350 mV Differential Signaling Power Off Protection (Outputs in Tristate) Temperature Operating Range 40C to +125C PINOUT DIAGRAM These are PbFree Devices Typical Applications: 5 V 1 IN DD Automotive: Head Lamp Lighting for Cars Telecom: Wireless, Microwave and Optical GND 2 3 Q Q 4 Table 1. PIN DESCRIPTION Pin Number Pin Name I/O Type Description 1 V Power Supply Pin DD 2 GND Ground Pin ORDERING INFORMATION 3 Q Output Inverting Output Pin Device Package Shipping 4 Q Output NonInverting Output NBA3N011SSNT1G SOT235 3000 / Tape & 5 IN Input Input Pin (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2016 Rev. 0 NBA3N011S/DNBA3N011S Table 2. ATTRIBUTES (Note 1) Characteristics Value ESD Protection Human Body Model (JEDEC Standard 22, Method A114E) All Pins 8 kV Charge Device Model (JEDEC Standard 22, Method C101D) All Pins 1.25 kV Moisture Sensitivity (Note 1) Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 Code V0 A 0.125 in 28 to 34 1. For additional information, see Application Note AND8003/D Table 3. MAXIMUM RATINGS Symbol Parameter Rating Unit V Supply voltage 0.30 V 4.0 V DD DD V Input Voltage (IN) LVCMOS 0.30 to (V + 0.30) V IN DD V Output Voltage (Q/Q) LVDS 0.30 to +3.90 V Q I Output Short Circuit Current LVDS 24 mA OS Tj Maximum Junction Temperature 135 C Tstg Storage Temperature Range 65 to +150 C Thermal resistance (JunctiontoCase) (Note 3) 107 C/W JC Thermal resistance (JunctiontoAmbient) (Note 3) 138.5 C/W JA T Lead Temperature Soldering (4 Seconds) SOLDERRM/D 260 C sol PD Package Power Dissipation 25C Derating of 7.22 mW/C above 25C 794 mW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. The maximum ratings applied are individual stress limit values and not valid simultaneously. 3. JEDEC standard multilayer board 2S2P (2 signal 2 power) Table 4. DC CHARACTERISTICS V = 3.3 V 0.3 V, GND = 0 V, T 40C to +125C DD A Symbol Parameter Test Conditions Min Typ Max Unit I Power Supply Current NoLoad (Pin: V V = V or GND) 5 8 mA DD DD IN DD RL = 100 (Pin: V V = V or GND) 7 10 mA DD IN DD V Input High Voltage Pin: IN 2.0 V IH V DD V Input Low Voltage Pin: IN GND 0.8 V IL I Input High Current Pin: IN V = 3.3 V or 2.4 V 2 10 A IH IN I Input Low Current Pin: IN V = GND or 0.5 V 1 10 A IL IN V Input Clamp Voltage I = 18 mA 1.5 0.6 V CL CL C Input Capacitance 3 pF IN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

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