MSA1162GT1G General Purpose Amplifier Transistors PNP Surface Mount Features MSA1162GT1G TYPICAL ELECTRICAL CHARACTERISTICS 200 1000 1.5 mA 2.0 mA 160 1.0 mA T = 100C A 120 25C 25C 0.5 mA 100 80 I = 0.2 mA B 40 T = 25C A V = 1.0 V CE 0 10 0 1 2 3 4 5 6 1 10 100 1000 V , COLLECTOREMITTER VOLTAGE (V) I , COLLECTOR CURRENT (mA) CE C Figure 1. Collector Saturation Region Figure 2. DC Current Gain 1000 1 I /I = 10 C B T = 100C A T = 100C A 25C 25C 25C 25C 100 0.1 V = 6.0 V CE 10 0.01 1 10 100 1000 1 10 100 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 3. DC Current Gain Figure 4. V versus I CE(sat) C 10 10,000 COMMON EMITTER 25C V = 6 V CE T = 100C A 1000 25C 100 1 10 1 T = 25C A I /I = 10 C B 0.1 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 I , COLLECTOR CURRENT (mA) V , BASEEMITTER VOLTAGE (V) C BE Figure 5. V versus I Figure 6. Base Emitter Voltage BE(sat) C