Product Information

MMT05B310T3G

MMT05B310T3G electronic component of ON Semiconductor

Datasheet
Thyristor Surge Protection Devices - TSPD 50A Surge 365V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

2004: AUD 0.3332 ( AUD 0.37 Inc GST) ea
Line Total: AUD 667.7328 ( AUD 734.51 Inc GST)

0 - Global Stock
MOQ: 2004  Multiples: 2004
Pack Size: 2004
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 2500
Multiples : 2500

Stock Image

MMT05B310T3G
ON Semiconductor

2500 : AUD 0.2216

0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 2004
Multiples : 2004

Stock Image

MMT05B310T3G
ON Semiconductor

2004 : AUD 0.3332

0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 2500
Multiples : 2500

Stock Image

MMT05B310T3G
ON Semiconductor

2500 : AUD 0.2216

     
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Notes:- Show Stocked Products With Similar Attributes.

MMT05B230T3, MMT05B260T3, MMT05B310T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD MMT05B230T3, MMT05B260T3, MMT05B310T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State T 40 to +125 C J1 Overload Junction Temperature Maximum Conducting State Only T +175 C J2 Instantaneous Peak Power Dissipation (I = 50 A, 10x1000 sec 25C) P 2000 W pk PK Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to J forward and reverse polarities. Characteristics Symbol Min Typ Max Unit Breakover Voltage (Both polarities) V V (BO) (dv/dt = 100 V/ s, I = 1.0 A, Vdc = 1000 V) MMT05B230T3 265 SC MMT05B260T3 320 MMT05B310T3 365 (+65C) 280 MMT05B230T3 MMT05B260T3 340 MMT05B310T3 400 Breakover Voltage (Both polarities) V V (BO) (f = 60 Hz, I = 1.0 A(rms), V = 1000 V(rms), MMT05B230T3 265 SC OC 320 R = 1.0 k , t = 0.5 cycle) (Note 3) MMT05B260T3 I MMT05B310T3 365 (+65C) MMT05B230T3 280 MMT05B260T3 340 MMT05B310T3 400 Breakover Voltage Temperature Coefficient dV /dT 0.08 %/C (BO) J Breakdown Voltage (I = 1.0 mA) Both polarities V V (BR) (BR) MMT05B230T3 190 MMT05B260T3 240 MMT05B310T3 280 Off State Current (V = 50 V) Both polarities I 2.0 A D1 D1 I 5.0 D2 Off State Current (V = V ) Both polarities D2 DM OnState Voltage (I = 1.0 A) V 1.53 3.0 V T T (PW 300 s, Duty Cycle 2%) (Note 3) Breakover Current (f = 60 Hz, V = 1000 V(rms), R = 1.0 k ) Both polarities I 230 mA DM S BO Holding Current (Both polarities) (Note 3) I 150 340 mA H V = 500 V I (Initiating Current) = 1.0 A S T Critical Rate of Rise of OffState Voltage dv/dt 2000 V/ s (Linear waveform, V = Rated V , T = 25C) D BR J Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) C 22 pF O 53 75 Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal) 3. Measured under pulse conditions to reduce heating.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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