Product Information

MMT05A260T3G

MMT05A260T3G electronic component of ON Semiconductor

Datasheet
Thyristor Surge Protection Devices - TSPD 50A Surge 320V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.1269 ( AUD 0.14 Inc GST) ea
Line Total: AUD 0.1269 ( AUD 0.14 Inc GST)

0 - Global Stock
MOQ: 1  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 1
Multiples : 5000

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MMT05A260T3G
ON Semiconductor

1 : AUD 0.1269
5001 : AUD 0.0873

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Breakover Voltage VBO
Rated Repetitive Off-State Voltage VDRM
Holding Current Ih Max
On-State Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Off-State Leakage Current Vdrm Idrm
Product
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

MMT05A230T3, MMT05A260T3, MMT05A310T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD MMT05A230T3, MMT05A260T3, MMT05A310T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range T 40 to +125 C J1 Blocking or Conducting State Overload Junction Temperature Maximum Conducting State Only T +175 C J2 Instantaneous Peak Power Dissipation (I = 50A, 10x1000 sec 25C) P 2000 W pk PK Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Symbol Min Typ Max Unit Breakover Voltage (Both polarities) V Volts (BO) (dv/dt = 100 V/s, I = 1.0 A, Vdc = 1000 V) MMT05A230T3 265 SC MMT05A260T3 320 MMT05A310T3 365 (+65C) MMT05A230T3 280 MMT05A260T3 340 MMT05A310T3 400 Breakover Voltage (Both polarities) V Volts (BO) (f = 60 Hz, I = 1.0 A(rms), V = 1000 V(rms), MMT05A230T3 265 SC OC R = 1.0 k, t = 0.5 cycle) (Note 3) MMT05A260T3 320 I MMT05A310T3 365 (+65C) MMT05A230T3 280 MMT05A260T3 340 MMT05A310T3 400 Breakover Voltage Temperature Coefficient dV /dT 0.08 %/C (BO) J Breakdown Voltage (I = 1.0 mA) Both polarities V Volts (BR) (BR) MMT05A230T3 190 MMT05A260T3 240 MMT05A310T3 280 Off State Current (V = 50 V) Both polarities I 2.0 A D1 D1 Off State Current (V = V ) Both polarities I 5.0 D2 DM D2 OnState Voltage (I = 1.0 A) V 1.53 3.0 Volts T T (PW 300 s, Duty Cycle 2%) (Note 3) Breakover Current (f = 60 Hz, V = 1000 V(rms), R = 1.0 k) I 230 mA DM S BO Both polarities Holding Current (Both polarities) (Note 3) I 150 340 mA H V = 500 Volts I (Initiating Current) = 1.0 Amp S T Critical Rate of Rise of OffState Voltage dv/dt 2000 V/s (Linear waveform, V = Rated V , T = 25C) D BR J Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal) C 22 pF O Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal) 35 50 3. Measured under pulse conditions to reduce heating.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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