The MMBT3906WT1G with ON Semiconductor Bipolar Transistors - BJT 200mA 40V PNP is a surface-mount PNP silicon transistor developed by ON Semiconductor. This transistor is designed for general-purpose amplifier applications. It has a low collector-emitter saturation voltage of 75 mV maximum at 200mA collector current. It also has a low noise figure of 20dB maximum and a gain of 50dB maximum at 1MHz. This transistor also boasts a very low collector capacitance of 4.2pF maximum. The reverse current leakage of the device is also very low, at 0.1uA maximum. The wide operating temperature range of -65 to +150 degrees Celsius gives it a very good application in temperature-sensitive applications. The package of the MMBT3906WT1G comes in a SOT-23 surface-mount technology.