J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier December 2010 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable. J309 MMBFJ309 MMBFJ310 J310 G S G SOT-23 TO-92 Mark MMBFJ309 : 6U S D MMBFJ310 : 6T D Absolute Maximum Ratings * T = 25C unless otherwise noted a Symbol Parameter Value Units V Drain-Source Voltage 25 V DS V Gate-Source Voltage -25 V GS I Forward Gate Current 10 mA GF T T Operating and Storage Junction Temperature Range - 55 to +150 C J, stg * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T = 25 C unless otherwise noted a Max. Symbol Parameter Units J309-J310 *MMBFJ309-310 Total Device Dissipation 625 350 mW P D Derate above 25 C 5.0 2.8 mW/C R Thermal Resistance, Junction to Case 127 C/W JC R Thermal Resistance, Junction to Ambient 357 556 C/W JA * Device mounted on FR-4 PCB 1.6 X 1.6 X 0.06 . 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 1 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Electrical Characteristics T = 25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV Gate-Source Breakdown Voltage I = -1.0A, V = 0 -25 V (BR)GSS G DS I Gate Reverse Current V = -15V, V = 0 -1.0 nA GSS GS DS V = -15V, V = 0, T = 125C -1.0 A GS DS a V Gate-Source Cutoff Voltage V = 10V, I = 1.0nA 309 -1.0 -4.0 V GS(off) DS D 310 -2.0 -6.5 V On Characteristics I Zero-Gate Voltage Drain V = 10V, V = 0 309 12 30 mA DSS DS GS Current* 310 24 60 mA V Gate-Source Forward Voltage V = 0, I = 1.0mA 1.0 V GS(f) DS G Small Signal Characteristics Re Common-Source Input V = 10V, I = 10mA, f = 100MHz (yis) DS D Conductance 309 0.7 mmhos 310 0.5 mmhos Re Common-Source Output V = 10V, I = 10mA, f = 100MHz 0.25 mmhos (yos) DS D Conductance G Common-Gate Power Gain V = 10V, I = 10mA, f = 100MHz 16 dB pg DS D Re ) Common-Source Forward V = 10V, I = 10mA, f = 100MHz 12 mmhos (yfs DS D Transconductance Re Common-Gate Input V = 10V, I = 10mA, f = 100MHz 12 mmhos (yig) DS D Conductance g Common-Source Forward V = 10V, I = 10mA, f = 1.0kHz fs DS D Transconductance 309 10,000 20,000 mhos 310 8,000 18,000 mhos g Common-Source Output V = 10V, I = 10mA, f = 1.0kHz 150 mhos oss DS D Conductance g Common-Gate Forward V = 10V, I = 10mA, f = 1.0kHz fg DS D Conductance 309 13,000 mhos 310 12,000 mhos g Common-Gate Output V = 10V, I = 10mA, f = 1.0kHz og DS D Conductance 309 100 mhos 310 150 mhos C Drain-Gate Capacitance V = 0, V = -10V, f = 1.0MHz 2.0 2.5 pF dg DS GS C Source-Gate Capacitance V = 0, V = -10V, f = 1.0MHz 4.1 5.0 pF sg DS GS NF Noise Figure V = 10V, I = 10mA, f = 450MHz 3.0 dB DS D e Equivalent Short-Circuit Input V = 10V, I = 10mA, f = 100Hz 6.0 nV/ Hz n DS D Noise Voltage * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 2