Product Information

MAC08BT1G

MAC08BT1G electronic component of ON Semiconductor

Datasheet
TRIAC Logic - Sensitive Gate 200 V 800 mA Surface Mount SOT-223

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.7024 ( AUD 0.77 Inc GST) ea
Line Total: AUD 0.7024 ( AUD 0.77 Inc GST)

1929 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1929 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

Stock Image

MAC08BT1G
ON Semiconductor

1 : AUD 0.7926
10 : AUD 0.6794
100 : AUD 0.4795
500 : AUD 0.414
1000 : AUD 0.345
2000 : AUD 0.299
10000 : AUD 0.2937
25000 : AUD 0.2884
50000 : AUD 0.2813

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Hts Code
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

Thyristors Surface Mount 200V - 600V > MAC08BT1, MAC08MT1 Pb MAC08BT1, MAC08MT1 Description Designed for high volume, low cost, industrial and consumer applications such as motor control process control temperature, light and speed control. Features Sensitive Gate Trigger Surface Mount Package Current in Four Trigger PbFree Packages are Modes Available Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Functional Diagram Pin Out 4 MT 1 MT 2 G Additional Information 3 1 2 Samples Datasheet Resources 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19Thyristors Surface Mount 200V - 600V > MAC08BT1, MAC08MT1 Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) MAC08BT1 V , 200 DRM V (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 110C) MAC08MT1 V 600 J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80C) I 0.8 A C T (RMS) Peak Non-Repetitive Surge Current I 8.0 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 25C) C 2 Circuit Fusing Consideration (t = 8.3 msec) I t 0.4 Asec Peak Gate Power (Pulse Width 10 sec, T = 80C) P 5.0 W C GM Average Gate Power (t = 8.3 msec, T = 80C) P 0.1 W C G(AV) Operating Junction Temperature Range T -40 to +110 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential DRM RRM on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JunctiontoAmbient PCB Mounted per Figure 1 R 156 C/W 8JA 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for 10 seconds. Electrical Characteristics - OFF (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit - - 10 A Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 110C I AK DRM RRM J RRM - - 200 mA Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (Note 2) (I = 1.1 A) V 1.9 V TM TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 ) I 10 mA D L GT Holding Current (V = 12 V, Gate Open, Initiating Current = 20 mA)) I 5.0 mA D H Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 ) V 2.0 V D L GT 2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Commutation Voltage (f = 250 Hz, I = 1.0 A, Commutating di/dt = 1.5 A/mS TM OnState Current Duration = 2.0 mS, V = 200 V, (dI/dt)c 1.5 A/ms DRM Gate Unenergized, T = 110C, C Gate Source Resistance = 150 , See Figure 10) Critical Rate of Rise of Off-State Voltage dV/dt 10 V/s (V = 0.67 x V , Exponential Waveform, Gate Open, T = 110C) D DRM J 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19

Tariff Desc

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