Product Information

EGP10G

EGP10G electronic component of ON Semiconductor

Datasheet
Rectifiers 1A Rectifier UF Recovery

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.7302 ( AUD 0.8 Inc GST) ea
Line Total: AUD 0.7302 ( AUD 0.8 Inc GST)

34374 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24491 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

Stock Image

EGP10G
ON Semiconductor

1 : AUD 0.5485
10 : AUD 0.4936
100 : AUD 0.4105
500 : AUD 0.3308
1000 : AUD 0.2406
5000 : AUD 0.2158
10000 : AUD 0.2088
25000 : AUD 0.2052
50000 : AUD 0.2017

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Power Dissipation
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

High Efficiency Rectifier 1.0 A Glass Passivated EGP10A - EGP10K Features Superfast Recovery Time for High Efficiency www.onsemi.com Low Forward Voltage, High Current Capability Low Leakage Current High Surge Current Capability ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted A Symbol Parameter Value Units AXIAL LEAD / DO 41 Average Rectified Current I 1.0 A O CASE 017AH 0.375 lead length T = 75 C L 30 A If(surge) Peak Forward Surge Current MARKING DIAGRAM 8.3 ms single halfsinewave Superimposed on rated load EGP10K (JEDEC method) Y&Z&3 Total Device Dissipation W P 2.5 D Derate above 25 C 17 mWC EGP10K = Specific Device Code C/W I Thermal Resistance, Junction to Ambient 50 C Y = ON Semiconductor Logo C TJ, TSTG Junction and Storage Temperature Range 65 ~ 150 &Z = Assembly Code &3 = Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted A Device Parameter 10A 10B 10C 10D 10F 10G 10J 10K Units Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V Maximum RMS Voltage 35 70 105 140 210 280 420 560 V DC Reverse Voltage (Rated V ) 50 100 150 200 300 400 600 800 V R 5.0 T = 25 C A A Maximum Reverse Current at Rated V R T = 125 C 100 A A Maximum Reverse Recovery Time I = 0.5 A, I = 1.0 A, I = 0.25 A 50 75 nS F R rr Maximum Forward Voltage 2.0 A 0.95 1.25 1.7 V Typical Junction Capacitance 22 15 pF V = 4.0 V, f = 1.0 MHz R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: February, 2020 Rev. 1 EGP10K/DEGP10A EGP10K TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
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FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
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ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
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