Product Information

BCW66GLT3G

BCW66GLT3G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Bipolar Transistors - BJT GENRL TRANSISTOR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.3085 ( AUD 0.34 Inc GST) ea
Line Total: AUD 0.3085 ( AUD 0.34 Inc GST)

57518 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
53536 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

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BCW66GLT3G
ON Semiconductor

1 : AUD 0.299
10 : AUD 0.2052
100 : AUD 0.0832
1000 : AUD 0.0513
2500 : AUD 0.0478
10000 : AUD 0.0407
20000 : AUD 0.0354
50000 : AUD 0.0354
100000 : AUD 0.0336

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

BCW66GLT1G, SBCW66GLT1G General Purpose Transistor NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOT23 (TO236) CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 3 CollectorEmitter Voltage V 45 Vdc CEO 1 CollectorBase Voltage V 75 Vdc CBO BASE EmitterBase Voltage V 5.0 Vdc EBO Collector Current Continuous I 800 mAdc C 2 EMITTER Collector Current Pulsed I 1200 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not MARKING DIAGRAM be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS EG M Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P 225 mW D (Note 1), T = 25C A Derate above 25C 1.8 mW/C EG = Specific Device Code Thermal Resistance, M = Date Code* JunctiontoAmbient R 556 C/W JA = PbFree Package Total Device Dissipation Alumina P D (*Note: Microdot may be in either location) Substrate, (Note 2) T = 25C 300 mW A *Date Code orientation and/or overbar may Derate above 25C 2.4 mW/C vary depending upon manufacturing location. Thermal Resistance, JunctiontoAmbient R 417 C/W JA ORDERING INFORMATION Junction and Storage Temperature T , T 55 to +150 C J stg 1. FR5 = 1.0 0.75 0.062 in. Device Package Shipping 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. BCW66GLT1G SOT23 3,000/Tape & Reel (PbFree) SBCW66GLT1G SOT23 3,000/Tape & Reel (PbFree) BCW66GLT3G SOT23 10,000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2016 Rev. 6 BCW66GLT1/DBCW66GLT1G, SBCW66GLT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 10 mAdc, I = 0) V 45 Vdc C B (BR)CEO CollectorEmitter Breakdown Voltage (I = 10 Adc, V = 0) V 75 Vdc C EB (BR)CES EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 5.0 Vdc E C (BR)EBO Collector Cutoff Current I CES (V = 45 Vdc, I = 0) 20 nAdc CE E (V = 45 Vdc, I = 0, T = 150C) 20 Adc CE E A Emitter Cutoff Current (V = 4.0 Vdc, I = 0) I 20 nAdc EB C EBO ON CHARACTERISTICS DC Current Gain h FE (I = 100 Adc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 1.0 Vdc) 110 C CE (I = 100 mAdc, V = 1.0 Vdc) 160 400 C CE (I = 500 mAdc, V = 2.0 Vdc) 60 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.7 C B (I = 100 mAdc, I = 10 mAdc) 0.3 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 500 mAdc, I = 50 mAdc) 2.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) C CE Output Capacitance C 12 pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 80 pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C Noise Figure NF 10 dB (V = 5.0 Vdc, I = 0.2 mAdc, R = 1.0 k , f = 1.0 kHz, BW = 200 Hz) CE C S SWITCHING CHARACTERISTICS TurnOn Time (I = I = 15 mAdc) t 100 ns B1 B2 on TurnOff Time (I = 150 mAdc, R = 150 ) t 400 ns C L off Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 1 1.2 I /I = 10 I /I = 10 C B C B 1.1 1.0 0.9 T = 55C A 0.8 0.1 0.7 0.6 T = 25C T = 25C A A 0.5 T = 150C A 0.4 0.3 T = 150C A T = 55C A 0.01 0.2 0.1 1 10 100 1000 0.1 1 10 100 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1. Collector Emitter Saturation Voltage Figure 2. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current www.onsemi.com 2 V , COLLECTOREMITTER CE SATURATION VOLTAGE (V) V , BASEEMITTER BE(sat) SATURATION VOLTAGE (V)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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