Product Information

BC557CZL1

BC557CZL1 electronic component of ON Semiconductor

Datasheet
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Ammo

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

8013: AUD 0.0875 ( AUD 0.1 Inc GST) ea
Line Total: AUD 701.1375 ( AUD 771.25 Inc GST)

58200 - Global Stock
Ships to you between
Mon. 22 Jul to Fri. 26 Jul
MOQ: 8013  Multiples: 8013
Pack Size: 8013
Availability Price Quantity
11638 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 100
Multiples : 1

Stock Image

BC557CZL1
ON Semiconductor

100 : AUD 3.1702
250 : AUD 0.9834
500 : AUD 0.7552
1000 : AUD 0.626
2500 : AUD 0.5452
5000 : AUD 0.4846
10000 : AUD 0.4038
25000 : AUD 0.3635

     
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Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon BC556B, BC557A, B, C, BC558B ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 2.0 mAdc, I = 0) BC556 65 C B BC557 45 BC558 30 CollectorBase Breakdown Voltage V V (BR)CBO (I = 100 Adc) BC556 80 C 50 BC557 BC558 30 EmitterBase Breakdown Voltage V V (BR)EBO 5.0 (I = 100 Adc, I = 0) BC556 E C BC557 5.0 BC558 5.0 CollectorEmitter Leakage Current I CES (V = 40 V) BC556 2.0 100 nA CES (V = 20 V) BC557 2.0 100 CES BC558 2.0 100 (V = 20 V, T = 125C) BC556 4.0 A CES A BC557 4.0 BC558 4.0 ON CHARACTERISTICS DC Current Gain h FE (I = 10 Adc, V = 5.0 V) A Series Device 90 C CE B Series Devices 150 C Series Devices 270 120 800 (I = 2.0 mAdc, V = 5.0 V) BC557 C CE A Series Device 120 170 220 B Series Devices 180 290 460 C Series Devices 420 500 800 (I = 100 mAdc, V = 5.0 V) A Series Device 120 C CE B Series Devices 180 C Series Devices 300 CollectorEmitter Saturation Voltage V V CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.075 0.3 C B (I = 10 mAdc, I = see Note 1) 0.3 0.6 C B (I = 100 mAdc, I = 5.0 mAdc) 0.25 0.65 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.7 C B (I = 100 mAdc, I = 5.0 mAdc) 1.0 C B BaseEmitter On Voltage V V BE(on) (I = 2.0 mAdc, V = 5.0 Vdc) 0.55 0.62 0.7 C CE (I = 10 mAdc, V = 5.0 Vdc) 0.7 0.82 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) BC556 280 C CE BC557 320 BC558 360 Output Capacitance C 3.0 6.0 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB C Noise Figure NF dB (I = 0.2 mAdc, V = 5.0 V, BC556 2.0 10 C CE R = 2.0 k , f = 1.0 kHz, f = 200 Hz) BC557 2.0 10 S BC558 2.0 10 SmallSignal Current Gain h fe (I = 2.0 mAdc, V = 5.0 V, f = 1.0 kHz) BC557 125 900 C CE A Series Device 125 260 B Series Devices 240 500 C Series Devices 450 900 1. I = 10 mAdc on the constant base current characteristics, which yields the point I = 11 mAdc, V = 1.0 V. C C CE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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