Product Information

BAV99LT3G

BAV99LT3G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 70V 215mA Dual

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

10000: AUD 0.0326 ( AUD 0.04 Inc GST) ea
Line Total: AUD 326 ( AUD 358.6 Inc GST)

126100 - Global Stock
Ships to you between
Fri. 12 Jul to Thu. 18 Jul
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
126100 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 10000
Multiples : 10000

Stock Image

BAV99LT3G
ON Semiconductor

10000 : AUD 0.0326
20000 : AUD 0.028
30000 : AUD 0.0278
50000 : AUD 0.0276
100000 : AUD 0.0248
250000 : AUD 0.0244

32165 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 1
Multiples : 1

Stock Image

BAV99LT3G
ON Semiconductor

1 : AUD 0.272
50 : AUD 0.198
100 : AUD 0.106
250 : AUD 0.096
500 : AUD 0.084

424 - Global Stock


Ships to you between
Fri. 19 Jul to Wed. 24 Jul

MOQ : 10
Multiples : 10

Stock Image

BAV99LT3G
ON Semiconductor

10 : AUD 0.0426
100 : AUD 0.0417
300 : AUD 0.0411
1000 : AUD 0.0405

     
Manufacturer
Product Category
RoHS - XON
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Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

The BAV99LT3G with Diodes - General Purpose, Power, Switching 70V 215mA Dual manufactured by ON Semiconductor is a dual, small-signal, low-power Schottky diode with a rated forward current of 70V and 215mA. The device features an extremely low forward voltage drop of typically 0.14V at a rated current of 215mA and offers fast switching speeds with a maximum reverse recovery time of 2 ns. The device exhibits excellent power dissipation and thermal characteristics with a maximum operating junction temperature of 150 degrees Celsius and a low thermal resistance of 1.2K/W. Additionally, it has an avalanche capability at a rated VR of 25V and has a reverse leakage current of 10uA at 25V. Overall, this device is suitable for high performance switching applications in automotive and consumer applications.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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