Product Information

50A02SS-TL-E

50A02SS-TL-E electronic component of ON Semiconductor

Datasheet
Bipolar (BJT) Transistor PNP 50 V 400 mA 690MHz 200 mW Surface Mount 3-SSFP

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

162: AUD 0.0702 ( AUD 0.08 Inc GST) ea
Line Total: AUD 11.3724 ( AUD 12.51 Inc GST)

403110 - Global Stock
Ships to you between
Fri. 12 Jul to Thu. 18 Jul
MOQ: 162  Multiples: 1
Pack Size: 1
Availability Price Quantity
403110 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 162
Multiples : 1

Stock Image

50A02SS-TL-E
ON Semiconductor

162 : AUD 0.0702

4749 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 191
Multiples : 1

Stock Image

50A02SS-TL-E
ON Semiconductor

191 : AUD 0.0726
250 : AUD 0.0722
500 : AUD 0.0718
1000 : AUD 0.0714
3000 : AUD 0.071

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

LOT No. LOT No. Ordering number : EN7491A 50A02SS Bipolar Transistor 50A02SS Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --40V, I =0A --100 nA CBO CB E Emitter Cutoff Current I V = --4V, I =0A --100 nA EBO EB C DC Current Gain h V = --2V, I = --10mA 200 500 FE CE C Gain-Bandwidth Product f V = --10V, I = --50mA 690 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 3.8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I = --100mA, I = --10mA --60 --120 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = --100mA, I = --10mA --0.9 --1.2 V BE C B Collector-to-Base Breakdown Voltage V I = --10 A, I =0A --50 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = --1mA, R = --50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = --10A, I =0A --5 V (BR)EBO E C Turn-ON Time t 30 ns on Storage Time t See speci ed Test Circuit. 170 ns stg Fall Time t 30 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R V B R R L 50 ++ 220 F 470 F V =5V V = --25V BE CC I =20I = --20I = --200mA C B1 B2 Ordering Information Device Package Shipping memo 50A02SS-TL-E SSFP 8,000pcs./reel Pb Free No.7491-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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