Ordering number : ENA0583A 2SA2202 Bipolar Transistor 2SA2202 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I --400 mA B 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =--80V, I =0A --1 A CBO CB E Emitter Cutoff Current I V =--4V, I =0A --1 A EBO EB C DC Current Gain h V =--5V, I =--100mA 200 400 FE CE C Gain-Bandwidth Product f V =--10V, I =--500mA 300 MHz T CE C Output Capacitance Cob V =--10V, f=1MHz 23 pF CB Collector to Emitter Saturation Voltage V (sat) I =--1A, I =--100mA --120 --240 mV CE C B Base to Emitter Saturation Voltage V (sat) I =--1A, I =--100mA --0.85 --1.2 V BE C B Collector to Base Breakdown Voltage V I =--10A, I =0A --100 V (BR)CBO C E V I =--100A, R =0 --100 V (BR)CES C BE Collector to Emitter Breakdown Voltage V I =--1mA, R = --100 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I =--10A, I =0A --7 V (BR)EBO E C Turn-ON Time t 40 ns on Storage Time t See speci ed Test Circuit. 600 ns stg Fall Time t 30 ns f Switching Time Test Circuit I B1 PW=20s D.C.1% I B2 OUTPUT INPUT V R R B R =100 L ++ 50 220F 470F V =5V V = --50V BE CC I =10I = --10I = --0.5A C B1 B2 Ordering Information Device Package Shipping memo 2SA2202-TD-E PCP 1,000pcs./reel Pb Free I -- V I -- V C CE C BE --2.0 --2.0 V = --5V CE --1.8 --1.6 --1.6 --1.4 --1.2 --1.2 --1.0 --0.8 --0.8 --0.6 --0.4 --0.4 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 0 --0.2 --0.4 --0.6 --0.8 --1.0 Collector to Emitter Voltage, V -- V IT11879 Base to Emitter Voltage, V -- V IT11880 CE BE No.A0583-2/4 I = --5mA B --40mA --20mA --80mA --100mA --60mA --120mA --140mA --160mA --180mA --200mA Ta=75C 25C --25C Collector Current, I -- A C Collector Current, I -- A C