The 2N6509TG is a N-channel enhancement-mode power MOSFET transistor manufactured by ON Semiconductor. It features an avalanche rated VDS rating of 100V, a low drain-source on-resistance of 6.2O, and a 175A continuous drain current. It is also designed with a high current drive capability, making it suitable for high efficiency power switching applications. Furthermore, its low input capacitance makes it ideal for fast switching applications. The 2N6509TG is available in an 8-lead dual flatpack package.