The 2N6504G is a N-channel enhancement mode Field-Effect Transistor manufactured by ON Semiconductor. It is a mediumV-power device with a choice of JFET technology. This device has its drain-source voltage rated at 400V, drain current at 17.5A max and gate-source voltage (VGS) at -20V. It has ultra low RDS(ON) with fast switching. The drain and source are electrically isolated making it perfect for Power MOSFET applications. It is mainly used for power switching and solid-state relays.