2N6401G is a medium-voltage high-current NPN Bipolar Transistor made by ON Semiconductor. It has a maximum collector-base voltage of 300V and a maximum collector-emitter voltage of 300V. It can handle up to 8A (avg) of collector current and has a maximum power dissipation of 128W. The transistor has a PNP complementary type of 2N6402G and uses TO-220AB packaging.